Allicdata Part #: | NDP7060L-ND |
Manufacturer Part#: |
NDP7060L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A TO-220 |
More Detail: | N-Channel 60V 75A (Tc) Through Hole TO-220 |
DataSheet: | NDP7060L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 37.5A, 5V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDP7060L is a highly advanced single type FET (Field Effect Transistor) suitable for a wide range of applications. It is a modern and reliable FET that is highly efficient and cost-effective, making it one of the best choices for high-end applications. In this article, we will discuss the application fields and the working principles of the NDP7060L.
The application field of the NDP7060L mainly includes digital power systems, consumer power systems, LED lighting, and automotive systems. The FET is highly suitable for digital power systems because it has very low input current leakage, superior temperature performance and superior ESD protection. It is also ideal for consumer power systems because it has very low input capacitance, low spike on gate, very low gate charge, and very low reverse recovery time. In addition, the FET is also ideal for LED lighting and automotive applications because it offers very low on-resistance and can provide a cost-effective solution to the customer.
The working principle of the NDP7060L is based on the electron tunneling field-effect transistor (TFET) architecture. This architecture uses an energy barrier between the gate and the channel region; hence, the electrons can easily tunnel across the barrier. This leads to the separation of charge carriers and enables the FET to offer better switching performance than its counterparts. Furthermore, the FET can operate at low power levels and offers very low input capacitance. This makes it ideal for high efficiency systems.
In conclusion, the NDP7060L is a highly advanced single type FET that is highly suitable for a wide range of applications, particularly digital power systems, consumer power systems, LED lighting, and automotive systems. It has a robust TFET architecture that comes with an energy barrier and offers superior switching performance at low power levels. Furthermore, the FET also offers very low input capacitance, low spike on gate, very low gate charge, and very low reverse recovery time. Therefore, the NDP7060L is an ideal choice for high-end applications that require maximum efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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