NDT014L Discrete Semiconductor Products

NDT014L is an N-channel enhancement mode gallium nitride (GaN) high-electron-mobility transistor (HEMT). GaN-on-silicon HEMTs provide improved switching performance over voltage, better current handling, and reduced switching losses for industrial as well as consumer products. NDT014L offers very fast switching with superior EMI filtering, allowing designers to reflect highly reliable and manufacturable solutions for their electronic designs.

Application Fields of NDT014L

NDT014L is suitable for high-power RF applications such as power amplifiers, EV chargers and power supplies. It offers high performance, energy efficiency and low gate charge, making it suitable for both high-voltage and high-power applications. NDT014L can also be used in hybrid and analog circuits for precision power amplifiers and other high-frequency designs. Additionally, it can be used in automotive, computer and communication applications.

Working Principle of NDT014L

NDT014L employs a GaN-on-silicon technology to achieve higher current handling capability, low switching losses, and improved EMI performance. Its working principle is based on conventional field-effect transistor (FET) technology wherein the gate terminal is connected to the source voltage, and the output voltage is determined by the applied input voltage. When the gate-source voltage exceeds a certain threshold, current flows through the channel between the source and the drain of the device. This operation is known as an enhancement type operation. The current is controlled by the applied gate voltage. When the input voltage is reduced, the current flowing through the channel diminishes and the device switches off. This operation is known as a depletion type operation. The conventional FETs, such as GaAs, have very low signal-to-noise ratios due to their relatively low carrier mobility. However, the GaN-on-silicon technology used in NDT014L provides high carrier mobility that enables it to achieve better switch performance, lower switching losses and higher signal-to-noise ratios.

Conclusion

In conclusion, the NDT014L provides high-performance, high-power capabilities in a compact package, making it suitable for a wide range of applications. Its working principle is based on conventional field-effect transistor technology, whereby the gate-source voltage determines the switching characteristics of the device. The GaN-on-silicon technology used in NDT014L enables improved current-handling capabilities, lower switching losses and higher signal-to-noise ratio. These advantages make NDT014L an ideal solution for analog and power circuits in a variety of applications.