NDT01N60T1G Discrete Semiconductor Products

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NDT01N60T1G is a Power Field-Effect Transistor (Power FET) designed for use in applications such as DC/DC conversions and motor control. The NDT01N60T1G is an advanced high-voltage, N-channel MOSFET that is well-suited for use in a wide range of power switching applications where low gate charge and low on-state resistance are desirable. This FET is highly reliable and offers excellent performance characteristics.

Application field of NDT01N60T1G

The NDT01N60T1G is a highly reliable Power FET that finds use in low-voltage and high-voltage DC/DC conversions, motor control and switching regulators. This Power FET can also be used in other high-current/high-temperature applications as appropriate.

In DC/DC conversion, NDT01N60T1G can be used to control the input and output voltages through the gate voltage. The gate voltage determines the ON and OFF states of the device the NDT01N60T1G, thereby allowing the system to be tailored to a specific application. As a result, this device can be used to provide exceptional efficiency and high power density across a range of applications.

In motor control applications, the NDT01N60T1G can be used to switch on and off the load current as required, thereby allowing high switching frequency and efficient operation. Furthermore, since this FET has extremely low on-state resistance, switching losses are reduced, leading to improved system efficiency.

In switching regulator applications, this FET can be used to provide efficient conversion of one power level to another. It has low on-state resistance, low gate charge and high reliability, making it an ideal choice for a wide range of applications.

Working principle of NDT01N60T1G

The NDT01N60T1G is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor is composed of four layers: the source, which is the heavily doped charge-carrier region; the gate, which is the heavily insulated metal-oxide layer; the drain, which is the electrically conductive output; and the body, which is the heavily doped semiconductor material. As the gate-to-source voltage (Vgs) is applied, the electrons of the source and the gate layer are attracted, increasing the current flow between the source and the drain. When Vgs is removed, the current flow is decreased because the electrons are repelled. This simple yet effective principle is at the heart of the NDT01N60T1G.

The NDT01N60T1G is exceptionally reliable, thanks to its integrated structure that allows for efficient thermal conduction and the low on-state resistance, which ensures low power dissipation over a wide range of conditions. Furthermore, since this FET has extremely low gate charge, operation is optimized for speed, allowing for faster switching times.

In addition, the NDT01N60T1G also features a built-in protection circuit that allows the system to remain safe during operation. This protection circuit consists of an over-current protection circuit and an under-voltage lockout circuit. Thus, when over-current or under-voltage occurs, the protection circuit will trigger and the system will operate safely. This is especially useful in high current applications and can provide additional protection against a wide range of conditions.

Overall, the NDT01N60T1G is an ideal device for a wide range of power switching applications. Thanks to its low on-state resistance, low gate charge, integrated protection circuits and other features, it is highly reliable and offers excellent performance characteristics.

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