Allicdata Part #: | NDT02N60ZT3G-ND |
Manufacturer Part#: |
NDT02N60ZT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 300MA SOT223 |
More Detail: | N-Channel 600V 300mA (Tc) 2W (Tc) Surface Mount SO... |
DataSheet: | NDT02N60ZT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 700mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.4nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 170pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 (TO-261) |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NDT02N60ZT3G is a high performance device from a family of advanced process technology products designed to expand the boundaries of conventional FET operation. Its high performance characteristics, combined with design flexibility, make it the ideal choice for a wide range of applications.
NDT02N60ZT3G is a single source, n-channel enhancement-mode field-effect transistor (FET) designed as a general purpose part. It has a maximum drain-source voltage of 600V, a maximum drain current of 2A, and a maximum transconductance of 100mS. The device is manufactured using advanced technology and can be mounted in a wide variety of packages.
The NDT02N60ZT3G is often used as an electrical switch in a variety of applications. When an electric potential is applied to the gate, the device is activated and the drain-source current is limited by the RDS(on) of the device. The impedance between the drain and source is determined by the FET\'s gate-channel capacitance (CGS) and the RDS(on).
The NDT02N60ZT3G is commonly used to control the flow of current between the source and drain in applications including current sensing, power emerging, motor control, and lighting control. In motor control applications, it can be used to control the speed of the motor and also to limit current in the motor. In current sensing applications, it can be used to sense the current in a circuit and used as an overcurrent protection. In power emerging applications, it can be used to control the flow of current from the source to the drain and provide power control.
In addition to its use as an electrical switch, the NDT02N60ZT3G can also be used as an amplifier. When the gate bias voltage is increased, the drain current increases, resulting in amplification. This makes it ideal for design of very high speed, low power amplifiers.
Because it has low capacitance, the NDT02N60ZT3G is also ideal for low-noise analog switch applications. It has low capacitance, low on-resistance, and fast switching time, making it suitable for low-noise switch designs. Its low switching time also makes it suitable for high speed digital circuits.
The NDT02N60ZT3G is a versatile and powerful FET, and can be used in a variety of applications. It is capable of being mounted in a wide variety of packages, and can be used as an electronic switch, for current sensing, motor control, lighting control and many other applications. It is also suitable for use as an amplifier, and for low-noise switch designs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NDT02N60ZT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 300MA SO... |
NDT03N40ZT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 0.5A SOT... |
NDT02N60ZT1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 300MA SO... |
NDT03N40ZT1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 0.5A SOT... |
NDT01N60T1G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.4A SOT... |
NDT02N40T1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 400V 0.4A SOT... |
NDT014L | ON Semicondu... | 0.18 $ | 1000 | MOSFET N-CH 60V 2.8A SOT-... |
NDT014 | ON Semicondu... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...