NDT02N60ZT3G Allicdata Electronics
Allicdata Part #:

NDT02N60ZT3G-ND

Manufacturer Part#:

NDT02N60ZT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 300MA SOT223
More Detail: N-Channel 600V 300mA (Tc) 2W (Tc) Surface Mount SO...
DataSheet: NDT02N60ZT3G datasheetNDT02N60ZT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 8 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
FET Feature: --
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223 (TO-261)
Package / Case: TO-261-4, TO-261AA
Description

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The NDT02N60ZT3G is a high performance device from a family of advanced process technology products designed to expand the boundaries of conventional FET operation. Its high performance characteristics, combined with design flexibility, make it the ideal choice for a wide range of applications.

NDT02N60ZT3G is a single source, n-channel enhancement-mode field-effect transistor (FET) designed as a general purpose part. It has a maximum drain-source voltage of 600V, a maximum drain current of 2A, and a maximum transconductance of 100mS. The device is manufactured using advanced technology and can be mounted in a wide variety of packages.

The NDT02N60ZT3G is often used as an electrical switch in a variety of applications. When an electric potential is applied to the gate, the device is activated and the drain-source current is limited by the RDS(on) of the device. The impedance between the drain and source is determined by the FET\'s gate-channel capacitance (CGS) and the RDS(on).

The NDT02N60ZT3G is commonly used to control the flow of current between the source and drain in applications including current sensing, power emerging, motor control, and lighting control. In motor control applications, it can be used to control the speed of the motor and also to limit current in the motor. In current sensing applications, it can be used to sense the current in a circuit and used as an overcurrent protection. In power emerging applications, it can be used to control the flow of current from the source to the drain and provide power control.

In addition to its use as an electrical switch, the NDT02N60ZT3G can also be used as an amplifier. When the gate bias voltage is increased, the drain current increases, resulting in amplification. This makes it ideal for design of very high speed, low power amplifiers.

Because it has low capacitance, the NDT02N60ZT3G is also ideal for low-noise analog switch applications. It has low capacitance, low on-resistance, and fast switching time, making it suitable for low-noise switch designs. Its low switching time also makes it suitable for high speed digital circuits.

The NDT02N60ZT3G is a versatile and powerful FET, and can be used in a variety of applications. It is capable of being mounted in a wide variety of packages, and can be used as an electronic switch, for current sensing, motor control, lighting control and many other applications. It is also suitable for use as an amplifier, and for low-noise switch designs.

The specific data is subject to PDF, and the above content is for reference

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