Allicdata Part #: | NDT451AN_J23Z-ND |
Manufacturer Part#: |
NDT451AN_J23Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 7.2A SOT-223 |
More Detail: | N-Channel 30V 7.2A (Ta) 3W (Ta) Surface Mount SOT-... |
DataSheet: | NDT451AN_J23Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 7.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NDT451AN_J23Z is a common field-effect transistor (FET) or MOSFET (metal-oxide-semiconductor FET) device used in a variety of applications. FETs are widely used transistors that are capable of amplifying signals in a variety of circuits and systems. The NDT451AN_J23Z is a single FET/MOSFET device that is commonly used in amplifiers and other signal amplification applications.
The NDT451AN_J23Z is a single FET/MOSFET device and consists of a single source, gate, and drain. It has a relatively small footprint and is available in both through-hole and surface-mount packages. The NDT451AN_J23Z has a maximum voltage rating of 50 volts, with a maximum drain-source voltage of 30 volts. It is designed for use in low-frequency operations and can handle a maximum of 17 amps of current.
The working principle of the NDT451AN_J23Z basically involves applying a voltage to the gate in order to control the source and drain. When the gate voltage is applied, the source and drain channel will become more conductive. This will allow current to flow between the source and the drain, via the channel. When the voltage of the gate reaches a certain threshold, the channel will become completely conductive and it will be said to be “on”. Conversely, when the voltage of the gate approaches zero volts, the channel will become non-conductive and the device will be said to be “off”.
The NDT451AN_J23Z is commonly used in signal amplification applications. These include amplifiers, modulators, signal conditioners, and signal converters for audio, video, and power applications. It can also be used in power-supply and regulator circuits, as well as in logic circuits. The NDT451AN_J23Z is a relatively low cost device and is widely available. It is a popular choice for low-frequency signal amplification applications.
In conclusion, the NDT451AN_J23Z is a single FET/MOSFET device that is commonly used in a variety of applications. It is relatively small and has a maximum voltage rating of 50 volts and a maximum current rating of 17 amps. It is commonly used in audio, video, power, and logic applications, as well as in power-supply and regulator circuits. The working principle of the NDT451AN_J23Z involves applying a voltage to the gate in order to control the source and drain. The NDT451AN_J23Z is a popular choice for low-frequency signal amplification applications.
The specific data is subject to PDF, and the above content is for reference
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