NDT451AN Allicdata Electronics

NDT451AN Discrete Semiconductor Products

Allicdata Part #:

NDT451ANTR-ND

Manufacturer Part#:

NDT451AN

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 7.2A SOT-223-4
More Detail: N-Channel 30V 7.2A (Ta) 3W (Ta) Surface Mount SOT-...
DataSheet: NDT451AN datasheetNDT451AN Datasheet/PDF
Quantity: 1000
4000 +: $ 0.28786
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-4
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 35 mOhm @ 7.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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.

NDT451AN is aNexFETTM Power MOSFET, designed for use in audio, video and other high power applications, such as regulating the output of power supplies, audio switching systems and analog switches. The device has improved thermal resistance and is suitable for power switching applications up to 85V. NDT451AN is a 3-pin N-channel enhancement mode MOSFET with a low on-state resistance.

The main feature of the NDT451AN is its ability to work in a wide range of application fields. These include audio and video systems, as well as power rating applications such as battery charging, motor control, and load control. It also works in communication systems, such as GPRS, LTE, and Wi-Fi, as well as analog systems and high frequency switching applications.

The NDT451AN is an N-channel enhancement mode MOSFET. This means that the gate voltage is the primary control parameter of the device, and that no positive gate current is required to turn it on. Instead, a negative gate voltage is used to increase the conductivity of the channel and allow the current to flow. Moreover, the gate voltage has a linear relationship with the current, which makes it ideal for amplification and switching applications.

The NDT451AN is also characterized by its low input capacitance and low gate resistance. The input capacitance is the electrical energy stored in the gate-channel junction area, which is a function of the size of the N-channel. This low capacitance allows the device to respond to small gate voltage changes quickly. On the other hand, the low gate resistance also helps reduce the power losses in the device. This makes the NDT451AN a suitable choice for applications which require low switching losses, such as high frequency operation.

In addition, the NDT451AN offers excellent thermal performance. The operating temperature range is specified up to 150°C, which is higher than other similar types of devices. This makes the device suitable for high temperature applications such as automotive systems, which require robust devices.

The NDT451AN is also capable of sustaining high current density. It has a rated drain current of 40A and a peak drain current of 17.7A. This makes it an ideal choice for applications which require high current rating, such as high voltage AC power supplies and inverter circuits.

Overall, the NDT451AN is a reliable and efficient device, which is suitable for a wide range of applications. Its low on-state resistance, low input capacitance and low gate resistance make it well-suited for applications requiring fast switching, such as audio and video systems. Its excellent thermal performance makes it a good choice for high temperature applications, and its ability to sustain high current density makes it a great choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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