NDT454P Discrete Semiconductor Products |
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Allicdata Part #: | NDT454PFSTR-ND |
Manufacturer Part#: |
NDT454P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 5.9A SOT-223 |
More Detail: | P-Channel 30V 5.9A (Ta) 3W (Ta) Surface Mount SOT-... |
DataSheet: | NDT454P Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 950pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 5.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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NDT454P is a type of advanced single-gate field effect transistor (FET). It is designed to have excellent current handling capability and low on-resistance. The NDT454P has a very low voltage drain-source on-state resistance, making it ideal for use in power conversion, on-off control and power switching applications. The device also offers a wide range of gate voltage, allowing it to be used in a variety of voltage regulator circuits.
The NDT454P is a relatively small device, which makes it well suited for use in small form factor applications, such as portable electronics and consumer goods. The device is manufactured using a high-performance CMOS process, ensuring consistency and reliable performance. The device has a maximum drain-source voltage of 20 volts, a gate-source voltage of 5 volts and a maximum drain current of 20 amps.
The NDT454P is a depletion-mode device and so requires a negative gate-source voltage to turn off. This allows it to be used for high-side switching applications, where it is often used to drive N-channel MOSFETs or IGBTs. The device also has a high input impedance and so is often used as an input buffer in various applications. The device has both a self-protected and static drain-source breakdown voltage, making it suitable for a variety of power control applications.
The NDT454P is designed for use in a variety of linear and switching regulator circuits. For example, it can be used in a simple buck regulator, where it switches current to the load using a positive gate voltage. It can also be used in a buck-boost regulator, allowing the output voltage to be adjusted to a desired value. Additionally, it can be used in a current-mode buck regulator, where it switches the current on a periodic basis, allowing the output current to be controlled.
The NDT454P can also be used in a variety of on-off control applications. For example, it can be used to control a fan speed or a lamp brightness. It can also be used in power switching applications, as it can provide a high-side switch that can be used to control the power supply of a circuit. Additionally, the device can be used as a gating element in a full-bridge configuration, where it can switch between two separate power sources.
The NDT454P is a versatile, single-gate field effect transistor that is suitable for a wide range of applications. Its low on-resistance and wide gate voltage range make it ideal for use in power conversion, on-off control and power switching applications. Additionally, the device’s small size makes it well suited for use in small form factor applications, such as portable electronics and consumer goods.
The specific data is subject to PDF, and the above content is for reference
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