Allicdata Part #: | NDTL01N60ZT1G-ND |
Manufacturer Part#: |
NDTL01N60ZT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 0.25A SOT223-4 |
More Detail: | N-Channel 600V 250mA (Tc) 2W (Tc) Surface Mount SO... |
DataSheet: | NDTL01N60ZT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 15 Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.9nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 92pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 (TO-261) |
Package / Case: | TO-261-4, TO-261AA |
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NDTL01N60ZT1G Application Field and Working Principle
The NDTL01N60ZT1G is a high-speed power MOSFET designed to transmit and block electrical current. It belongs to the N-channel depletion type MOSFET family and has the advantage of low “on” resistance and a wide range of drain-to-source breakdown voltage making it ideal for use in projects requiring a transistor. The NDTL01N60ZT1G is rated for a drain current of 27 amps and capable of operating at frequencies as high as 40 MHz.
Application Field
The application field of the NDTL01N60ZT1G varies depending on the specific project being carried out. Due to its high speed and low “on” resistance its often used in digital signal processing circuits or in high-frequency applications. This transistor can also be used in applications such as switching, amplification, and sensing. It can also be applied in capacitors, power measurement using current transformers, and signal conditioning for isolation of signal transfer.
Working Principle
The NDTL01N60ZT1G works by controlling the electric current that passes through it. This device uses a depletion type MOSFET (metal-oxide-semiconductor field-effect transistor) to control the current. The MOSFET consists of an insulated gate, which acts as a switch. When the gate is grounded, no current is allowed to pass through. When an electric field is applied to the gate, the gate will be turned on, allowing electric current to flow through the transistor. The combination of the low gate threshold voltage and gate capacitance is what provides the fast switching time of the NDTL01N60ZT1G.
Conclusion
The NDTL01N60ZT1G is a powerful and versatile MOSFET that has the ability to rapidly switch current. Its diverse range of applications, low “on” resistance, and wide range of breakdown voltage allow it to be used in numerous applications. As well, its fast switching time is a great advantage for projects that require a device that can switch quickly and efficiently. All of these qualities make the NDTL01N60ZT1G an ideal transistor for many applications.
The specific data is subject to PDF, and the above content is for reference
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