NDTL01N60ZT3G Allicdata Electronics
Allicdata Part #:

NDTL01N60ZT3G-ND

Manufacturer Part#:

NDTL01N60ZT3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 0.25A SOT223-4
More Detail: N-Channel 600V 250mA (Tc) 2W (Tc) Surface Mount SO...
DataSheet: NDTL01N60ZT3G datasheetNDTL01N60ZT3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 15 Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 25V
FET Feature: --
Power Dissipation (Max): 2W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223 (TO-261)
Package / Case: TO-261-4, TO-261AA
Description

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The NDTL01N60ZT3G is a type of Shottky Barrier Rectifier (SBR) or also known as a MOSFET, which is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a three terminal semiconductor device that uses an electric field to control the electrical properties of a substance.

The NDTL01N60ZT3G has a typical source-drain maximum current rating of 60 Amps (A) and a maximum power rating of 25 milliwatts (mw). It features an insulated gate control electrode and is a single N-channel MOSFET. It also has a typical voltage breakdown of 400 volts (V), a Junction Temperature (Tj) of 175 degrees Celsius (°C) and a Gate-source voltage (Vgs) of 12 volts (V).

The NDTL01N60ZT3G has many application fields, but is mainly used to switch high current and high power devices, such as motor relays and other applications. It can also be used in computer networking, power management and home appliances. In addition, it is used in applications like automotive products, industrial controllers, solid-state motors and robotics.

The NDTL01N60ZT3G MOSFET can also be used in audio amplifiers, power converters, power converters, user interface boards and other audio video products. Its low threshold and wide range of operating voltages make it suitable for all kinds of applications.

The basic working principle of the NDTL01N60ZT3G is simple. When the current is turned on, it will create a depletion area in the semiconducting region, thereby increasing the resistance offered by the MOSFET and reducing the voltage available across the load. When the gate voltage increases, the resistance offered by the MOSFET will reduce, thus making it easier for current to flow through the device, thereby allowing the power to flow across the load.

The NDTL01N60ZT3G is popular because of its high efficiency and low power loss. It also features a gate-drain breakdown voltage of 400 volts (V) and can operate efficiently with various power supplies. The low thermal resistance of the device also allows it to be used in components with high power densities. It is also an excellent choice for applications where power requirements are high, such as microcontrollers and mobile phones.

The NDTL01N60ZT3G is a great choice for applications requiring high current, high power and high efficiency at the same time. It is capable of delivering high current with a minimal amount of power loss and is reliable for use in high temperature operating conditions. The wide operating temperature range of the device also allows it to perform well over a large range of temperatures. This makes it suitable for many different applications like audio amplifiers and home appliances.

The specific data is subject to PDF, and the above content is for reference

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