NE552R679A-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE552R679A-A is a RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device, designed specifically for use in radio frequency (RF) applications. It is an integrated semiconductor device that combines both an RF MOSFET and a CMOS integrated circuit (IC) together in one package. It is designed to provide a high level of isolation, high input/output impedance, low power consumption, and low noise.

In terms of its application field, the device is typically used in wireless radio frequency systems such as wireless LAN networks, wireless systems for automotive navigation and communication systems, Global Position System (GPS) applications, and cellular phone systems. It can also be used in AM/FM radio receivers, satellite receivers, and TV sets. The device is also used in various military and medical applications such as medical imaging and scanning systems, military communications systems, and radar systems.

The working principle of the device is similar to that of a regular MOSFET. It utilizes the principle of operation of metal-oxide-semiconductor capacitors, which are an important part of a MOSFET structure. The device consists of three pins, the Gate, Source, and Drain. The Gate is the control terminal, while the Source and Drain are the electrodes where the current enters and leaves. When Gate voltage is applied, it attracts electrons in the channel between the Source and the Drain, creating a conducting channel between them. This allows current to flow from the Source to the Drain, which can be used to control the operation of another circuit.

The NE552R679A-A device also has several other useful features, such as its low oscillation frequency and its high-efficiency operation. It also has a very low power consumption, with an average drain current of only 2.5mA. Its package size is small and it does not need complicated thermal management systems. Furthermore, the device has low noise and high-frequency stability, making it suitable for communication systems with long-distance connections.

In summary, the NE552R679A-A is an RF MOSFET device, designed for use in radio frequency applications. It is a three-pin device, consisting of a Gate, Source, and Drain. The device is typically used in wireless systems such as wireless networks, automotive navigation, and communication systems, and medical and military applications. Its features include high-efficiency operation, low power consumption, low noise, and high-frequency stability.

The specific data is subject to PDF, and the above content is for reference