Allicdata Part #: | NE5531079A-T1-A-ND |
Manufacturer Part#: |
NE5531079A-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 30V 460MHZ 79A |
More Detail: | RF Mosfet LDMOS 7.5V 200mA 460MHz 40dBm 79A |
DataSheet: | NE5531079A-T1-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 460MHz |
Gain: | -- |
Voltage - Test: | 7.5V |
Current Rating: | 3A |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 40dBm |
Voltage - Rated: | 30V |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 79A |
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The NE5531079A-T1-A is a transistor-based radio frequency (RF) device used in a variety of applications. It is commonly used for switching and sensitivity control for RF receivers and transmitters, but can also be used in digital circuits, audio amplifiers, and other electronic equipment.
The NE5531079A-T1-A is an enhancement-mode, high-frequency metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled device, meaning that the current flowing through it is determined by the voltage applied to its gate terminal. The RF device includes two terminals; a drain and a source, which are connected to the power source and the load, respectively. The two terminals typically have a positive power supply and a negative or return line.
The working principle of the NE5531079A-T1-A is based on the fact that the electric field generated by an applied gate voltage causes carriers to be attracted from the source to the drain, creating a conductive channel through which electrons can flow. The current flow is dependent on the input voltage, so by changing the voltage applied to the gate, the current flowing through the device can be changed.
The NE5531079A-T1-A is primarily used in applications such as RF receiver’s sensitivity control, receive/transmit attenuation control, automatic gain control (AGC), low-noise amplification (LNA), low-frequency power amplification, digital circuits, and RF power amplifiers. It is also used in audio amplifiers and as an interface between digital and analog circuits.
The advantages of using this RF device include low power consumption and low distortion. It also has a low thermal resistance and good input-output isolation. The NE5531079A-T1-A can operate in both low-voltage and high-voltage applications, making it suitable for a wide range of applications. Additionally, it is available in different package sizes to suit the individual requirements of a particular circuit.
In summary, the NE5531079A-T1-A is a voltage-controlled RF device used for switching and sensitivity control. It has good input-output isolation, low power consumption and low distortion, which makes it suitable for applications such as RF receivers, digital circuits, and audio amplifiers. The device is also available in several different package sizes and can be used in both low-voltage and high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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