Allicdata Part #: | NE5550979A-A-ND |
Manufacturer Part#: |
NE5550979A-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 30V 900MHZ 79A-PKG |
More Detail: | RF Mosfet LDMOS 7.5V 200mA 900MHz 22dB 38.6dBm 79A |
DataSheet: | NE5550979A-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 900MHz |
Gain: | 22dB |
Voltage - Test: | 7.5V |
Current Rating: | 3A |
Noise Figure: | -- |
Current - Test: | 200mA |
Power - Output: | 38.6dBm |
Voltage - Rated: | 30V |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 79A |
Base Part Number: | NE5550 |
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NE5550979A-A application field and working principle
NE5550979A-A is an RF-MOSFET (Radio Frequency Metal Oxide Semiconductor Field Effect Transistor) part number manufactured by NEC Semiconductor. NE5550979A-A utilizes an all-n-type silicon semiconductor process. This device is capable of low on-resistance and provides excellent power, temperature and frequency characteristics.
Application Field
NE5550979A-A is designed to be used in RF applications up to 200MHz. It is suitable for use in mobile communications, digital satellite TV receivers, parametric tone receivers, and medical instruments. This device is also able to be used in noisy environments where high levels of EMI/RFI are present.
Working Principle
NE5550979A-A is a conventional MOSFET that works on the principle of the minority carrier injection. This device relies on the application of an electric field between the gate and the source of the device to control the current flow between the two regions. When a positive voltage is applied to the gate of the device, a conductive channel is formed between the source and the drain regions of the device. As the electric field between the gate and the source regions increases, the conductivity of the conductive channel also increases.
The NE5550979A-A device maintains excellent temperature and frequency characteristics due to its ability to dissipate heat quickly and therefore making it suitable for use in high frequency applications.
In addition to its low on-resistance, the NE5550979A-A device is also capable of providing excellent current gain characteristics. This device also features a sturdy package that is suitable for use in high speed circuits as well as in digital applications.
In summary, the NE5550979A-A is an RF MOSFET designed for use in high frequency circuits. This device utilizes an all-n-type silicon semiconductor process and is capable of providing excellent electrical performance. Features of this device include its low on-resistance, excellent temperature and frequency characteristics, and ability to dissipate heat quickly.
The specific data is subject to PDF, and the above content is for reference
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