NE5550979A-T1-A

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The NE5550979A-T1-A(THAT) is a high-performance small-signal N-Channel Enhancement Mode MOSFET that was specifically designed for use in RF (Radio Frequency) circuits. This MOSFET has several applications in the areas of low voltage power applications in cell phones and other wireless communication devices. The NE5550979A-T1-A MOSFET offers exceptional RF performance for wireless applications, with a maximum power dissipation of 600 W, an impedance range from 4 to 100 ohms, and a frequency range up to 10 kHz.

The working principle of the NE5550979A-T1-A MOSFET is based on a depletion-enhancement mode structure. The channels in this structure provide a path for the current flow and the gate voltage controls the amount of current that can pass through it. When the gate voltage is positive, it attracts the electrons to the channel, thereby allowing current flow across the channel. When the gate voltage is negative, it repels electrons away from the channel, thereby inhibiting current flow across the channel.

The NE5550979A-T1-A MOSFET can be used in many areas of RF applications ranging from cellular base stations to RF amplifiers. It can be used as an amplifier, mixer, power and low-voltage transistor, switch, and more. The NE5550979A-T1-A MOSFET also offers excellent noise performance for applications requiring a high-order of linearity and low distortion. Its dV/dt and dI/dt immunity make it is ideal for applications where noise immunity is important.

In addition, the NE5550979A-T1-A MOSFET offers an exceptionally low power consumption and is designed for use with low-power applications, making it ideal for use in battery operated systems such as cell phones and tablets. It is also ideal for RF applications with higher output powers, as it can support up to 600 W of power.

The NE5550979A-T1-A MOSFET also offers exceptional temperature performance, which is important in many RF applications, as it can handle temperatures up to 175° Celsius without any significant performance degradation. The gate capacitance of the NE5550979A-T1-A MOSFET is also very low, making it ideal for applications requiring a high level of linearity and low distortion.

Overall, the NE5550979A-T1-A MOSFET is an excellent choice for use in RF and other high frequency applications. It offers an exceptional level of performance, with a wide range of impressive characteristics for applications requiring low input power, high output power, and excellent noise immunity. It also offers reliable temperature performance and a low gate capacitance, making it ideal for use in applications requiring a high level of linearity and low distortion.

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