NE66219-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.3V
Frequency - Transition:	21GHz
Noise Figure (dB Typ @ f):	1.2dB @ 2GHz
Gain:	14dB
Power - Max:	115mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 2V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-523
Supplier Device Package:	SOT-523

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NE66219-A Introduction

Transistors are versatile semiconductor devices that have wide applications in a variety of electronics. The NE66219-A is a NPN general purpose transistor manufactured by Intersil Corporation. It is used primarily in radio-frequency (RF) circuits and is classified as a bipolar junction transistor (BJT).

Application Fields

The NE66219-A is ideal for applications requiring fast switching, high current, and low noise. Due to its high current gain, it is commonly used as an amplifier in audio circuits and as an oscillator in RF circuits. It can also be used as a switch in control systems and as a modulator in communications and signal processing applications.

Features and Specifications

The NE66219-A provides superior performance in the range of 10 to 1000 MHz, with a power gain of 40 dB and a maximum current gain of 600. It is designed for use in high frequency applications and has an operating temperature range of -40 to +85 °C. It also features a high breakdown voltage of 50 V, a low noise figure of 0.3 dB, and a wide stability range (-20 to +50 °C).

Layout and Packaging

The NE66219-A is available in the four-pin SOIC and SOT-23 package options. It measures 3.90 mm x 3.90 mm x 0.90 mm in the SOIC package and 2.90 mm x 1.60 mm x 0.90 mm in the SOT-23 package.

Working Principle

Like all transistors, the NE66219-A is a three-terminal device. It consists of three regions of semiconductor material separated by p-n junctions. The three main regions are known as the base, the collector, and the emitter. The base is the middle region; it is made from lightly doped p-type material and is the control terminal for the transistor. The collector is the region to which the output signal is applied; it is made from heavily doped n-type material. The emitter is the region from which the output signal is produced; it is made from heavily doped p-type material.

Operation

The operation of the NE66219-A is based on the movement of holes and electrons between the regions. When a small current is applied to the base, the holes in the base region move towards the collector and the electrons in the collector region move towards the emitter, resulting in a larger current in the collector-emitter circuit. This process is known as the “current gain” and is the main basis of operation of the transistor.

Conclusion

The NE66219-A is an ideal choice for applications requiring fast switching, high current, and low noise. It is used primarily in RF circuits and provides superior performance in the range of 10 to 1000 MHz. The transistor also has a wide stability range, a low noise figure, and a high breakdown voltage, making it suitable for a variety of high-frequency applications.

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