NE663M04-T2-A

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The NE663M04-T2-A is a type of RF bipolar junction transistor (BJT) that was developed by the National Semiconductor Corporation. It is an NPN device that is designed for applications operating in the frequency range of 2 GHz to 8 GHz.

The NE663M04-T2-A is a low-noise, high-gain RF BJT that is suitable for microwave amplifier and receiver applications. It has a nominal power gain of 13 dB at 8 GHz, an output power of 35 dBm at 1 dB compression, and a third order intercept point of 45 dBm.

The NE663M04-T2-A uses a single-stage common-emitter topology with a discrete capacitance with a blended collector filter. This design allows the NE663M04-T2-A to achieve higher power output levels when compared to other RF BJTs. In addition, the device is designed to reject harmonic generation and spurious signals, as well as possess low noise levels, making it an attractive choice for microwave applications.

The NE663M04-T2-A can be used in amplifier and switching applications. As an amplifier, the NE663M04-T2-A can be used to boost the signal strength of RF signals in order to provide the desired signal level for the downstream device. By utilizing a low-noise, high-gain design, the device can accurately amplify the input signal without introducing substantial noise or distortion. In switching applications, the NE663M04-T2-A can be used to open and close a RF signal path at a certain frequency. This is particularly useful in applications where precise control of the signal power is needed.

The NE663M04-T2-A utilizes a combination of device, circuit and system design techniques in order to maximize its performance. This includes the utilization of the emitter-to-base junction as the current control element, the use of a base resistor to reduce the collector-to-emitter voltage, the implementation of a capacitive filter with a higher inductance to maintain the desired output impedance, and the implementation of a junction blend to reduce device-to-device gain variations.

The working principle of the NE663M04-T2-A is fairly simple. When a RF signal is applied to the input of the device, the current in the collector-to-base junction is controlled by the emitter-to-base junction. This current is then amplified by the device and passes through the base resistor to the output, resulting in a gain in signal power. The gain of the device is determined by the resistance of the base resistor and the capacitive filter. The device also utilizes feedback to control the gain and linearity of the signal path.

In summary, the NE663M04-T2-A is a high-performance RF bipolar junction transistor that is designed for high-gain and low-noise microwave applications. It utilizes a combination of design techniques in order to maximize its performance, including a low-noise, high-gain design, harmonic and spurious signal rejection, and precise control of signal power. The working principle of the device is fairly simple and enables it to be used in amplifier, switching and other applications.

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