NE662M04-A Allicdata Electronics
Allicdata Part #:

NE662M04-A-ND

Manufacturer Part#:

NE662M04-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: RF TRANSISTOR NPN SOT-343F
More Detail: RF Transistor NPN 3.3V 35mA 25GHz 115mW Surface Mo...
DataSheet: NE662M04-A datasheetNE662M04-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
Gain: 18dB
Power - Max: 115mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343F
Base Part Number: NE662
Description

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The NE662M04-A is a type of Field Effect Transistor (FET) that can be used in radio frequency (RF) applications. It is a monolithic microwave integrated circuit (MMIC), which combines several components together on a single chip. The NE662M04-A is designed to work as a power amplifier and is capable of providing high output power in a small package. This makes it ideal for use in compact, low power RF systems.

The NE662M04-A utilizes a standard n-channel Field Effect Transportation (FET) configuration. The device consists of a source, a gate and a drain. When a voltage is applied to the gate, an electric field is created which causes electrons to flow from the source to the drain, allowing for controlled current conduction. The device is also capable of operating in depletion mode, meaning that it can amplify signals with a wide range of frequencies.

The NE662M04-A is capable of handling high power applications due to its high output power capacity. It has an input impedance of 50 ohms and an output power rating of up to 4 watts. The device has a power gain of up to 15 dB, which is enough to provide a strong signal in most applications. Additionally, the device can operate over a wide frequency range, with a bandwidth of between DC and 2 GHz.

The NE662M04-A has been designed to be highly reliable, as its power gain and output power remain relatively stable with changes in temperature and after long periods of operation. This helps it achieve excellent results in various RF applications, such as amplifiers, mixers, and transceivers. The device is also able to work under high levels of dynamic load, making it suitable for use in dynamic RF systems.

The NE662M04-A is a versatile device which can be used in wide variety of applications in the field of communication, consumer electronics, and automotive systems. It is an ideal choice for those who are looking for a high performance, reliable solution for their RF needs. With its ability to provide high output power and wide frequency response, the NE662M04-A is well-suited for both professional and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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