NE664M04-T2-A Discrete Semiconductor Products

NE664M04-T2-A application field and working principle

NE664M04-T2-A is a high-performance microwave bipolar junction transistor (BJT) made of silicon and germanium typically used in RF related applications. It is a 3-pin device that works in negative voltage mode, according to the emitter-base bias configuration, or as an audio frequency pre-amplifier.

Application fields

The NE664M04-T2-A can be used in microwave and RF applications, such as in repair kits and parts of antennas, for amplifying and gain control applications, for use in detector circuits, for other linear amplifying applications and mixer circuits. Other applications can be automatic gain control, oscillators and fast switching circuits, Radio Frequency (RF) amplifiers and oscillators, RF base stations and transmitter sections, high power amplifiers and High Frequency (HF) transceivers.

Working Principle

The NE664M04-T2-A works by amplifying an input signal, it is a three-terminal device with Base (B), Emitter (E) and Collector (C) pins. In the major applications with transistor, the biasing conditions are of utmost importance, and in this device, the biasing conditions are fixed by the biasing resistors R1, R2, R3 which keep the base threshold voltage Vth around the given value. The input signal passes through the amplifier, then through the resistor R3, then to the collector, then to the resistor R2, and lastly to the output. The NE664M04-T2-A has a collector current rating of 15mA, a collector-base breakdown voltage of 35V and a collector-emitter breakdown voltage of 20V.

The transistor has a high power gain usually maximized at various frequencies and a maximum gain bandwidth product of 15 MHz, at nominal stability. It has a high voltage uniformity ensuring flatter gain response and better stability. Furthermore, the NE664M04-T2-A features a parasitic capacitance of 0.5pF and typically has a power dissipation of 25mW.

Conclusion

In conclusion, the NE664M04-T2-A is a reliable and efficient high performance Silicon Germanium three-pin Bipolar Junction Transistor (BJT) suitable for a wide range of RF applications. It features high voltage uniformity, parasitic capacitance of 0.5pF, power gain of 15MHz and breakdown voltages of 35V and 20V respectively.