NE664M04-A

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NE664M04-A are a type of Bipolar Junction Transistors (BJT) designed for radio frequency (RF) applications. They are designed for high-frequency (HF) operation, high-power (HP) operation, and linear operation. The NE664M04-A are used in many different types of circuits and applications, including antennas, receivers, transmitters, power amplifiers, and other RF electronics.

The NE664M04-A are designed to operate with a power level of up to 250 watts. This is ideal for high-power, high-frequency applications such as those common in modern antenna systems. The operating frequency range of these transistors is typically between 400 MHz to 2 GHz. They are also capable of operating with a voltage range of up to 200 volts depending on the design of the circuit.

The NE664M04-A utilise a N-type collector-base junction. This is a direct current (DC) connection between the collector and the base electrode. This direct current provides excellent control over the collector-to-base capacitance which helps to reduce system noise and increase overall performance. As such, these transistors are much more efficient than their bipolar counterparts and can operate at significantly higher frequencies.

The NE664M04-A have a low cut-off voltage (Vce), meaning that the power generated by a signal is able to pass through the transistor easily. This enables a signal to be amplified more effectively. The low cut-off voltage also helps to reduce intermodulation products, which can otherwise cause distortion in the signal.

The NE664M04-A transistors also have a high power gain and a low noise level. The high power gain allows RF circuits to increase the power of incoming signals while keeping the noise level low. This helps reduce the amount of distortion created by the circuit, increasing signal fidelity and performance.

Finally, another important feature of the NE664M04-A transistors is their temperature stability. The transistors are able to maintain their performance even when exposed to very high temperatures. This is important in applications such as antenna systems where the components must be able to function reliably in demanding environments.

Overall, the NE664M04-A transistors are a versatile option for many different types of RF applications. They have a high power gain, low noise level, and excellent temperature stability. They are ideal for high-frequency, high-power, and linear applications, making them a great choice for antenna systems, receivers, transmitters, and power amplifiers.

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