Allicdata Part #: | NE66219-T1-A-ND |
Manufacturer Part#: |
NE66219-T1-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-523 |
More Detail: | RF Transistor NPN 3.3V 35mA 21GHz 115mW Surface Mo... |
DataSheet: | NE66219-T1-A Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 3.3V |
Frequency - Transition: | 21GHz |
Noise Figure (dB Typ @ f): | 1.2dB @ 2GHz |
Gain: | 14dB |
Power - Max: | 115mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 5mA, 2V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-523 |
Supplier Device Package: | SOT-523 |
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NE66219-T1-A is a low noise amplifier transistor designed for radio frequency (RF) and microwave applications. This device is a bipolar junction transistor (BJT) with a common emitter and NPN silicon technology, making it suitable for high demanding radio frequency applications. NE66219-T1-A has an amplification factor of 15dB, an input voltage range of 6V-45V and an output power of more than 0.5W.
This transistor is mainly used for low noise amplification in different communications systems such as mobile, Wi-Fi and satellite. It provides low noise performance, high frequency stability and high linearity in the amplification of signals. The device is widely used in oscillators and sensitive receiver applications, as well as in linear amplifiers.
The main feature of NE66219-T1-A is its wide frequency range, which is up to 3GHz, making it suitable for use in modern communications systems. The device also has high linearity and high stability across a wide frequency range, and is capable of achieving a gain compression of 15dB and a noise figure of 1.5dB at higher frequencies. In addition, the gain flatness and power stability of the device are also excellent, which is important for applications requiring high performance and reliability.
The working principle of NE66219-T1-A is based on the principle of a bipolar junction transistor. A NPN type BJT has a base, a collector and an emitter. This transistor works by controlling the flow of electric current between the base and the emitter using voltages applied to the base and the emitter. When the voltage applied to the base is increased, the current flow between the base and the emitter increases, thus amplifying the voltage applied to the collector, resulting in an amplified output. This transistor can also be used in reverse, with a PNP type BJT.
The performance of NE66219-T1-A is excellent and its high frequency linearity and stability are excellent. It is well-suited for low noise amplification and is an ideal choice for applications such as oscillators, sensitive receivers and linear amplifiers. This device is also suitable for use in a wide range of communications systems, from mobile, Wi-Fi and satellite to military communications. It is a reliable device with excellent performance for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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