NE662M04-T2-A Discrete Semiconductor Products |
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Allicdata Part #: | NE662M04-T2-ATR-ND |
Manufacturer Part#: |
NE662M04-T2-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | RF TRANSISTOR NPN SOT-343F |
More Detail: | RF Transistor NPN 3.3V 35mA 25GHz 115mW Surface Mo... |
DataSheet: | NE662M04-T2-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 3.3V |
Frequency - Transition: | 25GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 2GHz |
Gain: | 18dB |
Power - Max: | 115mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 5mA, 2V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-343F |
Supplier Device Package: | SOT-343F |
Base Part Number: | NE662 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NE662M04-T2-A is a type of transistor belonging to the Bipolar-Junction Transistor (BJT) and Radio Frequency (RF) category. It has a variety of application fields and plays an important role in various types of electronic circuits. In this article, we will take a closer look at the application field and working principle of this transistor.
Application Field
NE662M04-T2-A is a type of BJT and RF transistor which is used for a wide range of applications. It has a wide gain bandwidth and can operate in a variety of temperature ranges. This makes it an ideal choice for use in linear and non-linear applications. It is commonly used in low noise amplifiers (LNA), output drivers, and oscillators. It is also used in audio applications, such as CD and MP3 players, as well as in other electronic systems. It can be used in both narrow-band and wide-band applications, making it a versatile choice for use in multiple devices.
Working Principle
NE662M04-T2-A is a type of BJT and RF transistor. It operates on the same principles as other BJT transistors. It is a three-terminal device which consists of the collector, base and emitter terminals. The base terminal is used to control the current flow between the collector and emitter terminals. When the base current flows, it will cause the collector current to increase, resulting in a voltage drop between the collector and emitter terminals. This voltage drop can be used to create an inverting or non-inverting signal.
The gain bandwidth of NE662M04-T2-A transistors is also very good. It offers a wide gain bandwidth up to several GHz, which makes it suitable for use in RF applications. It has a higher maximum collector current than other BJT transistors, and is designed to operate at higher temperatures. This makes it an ideal choice for use in applications which require reliable operation in high temperature environments.
Summary
NE662M04-T2-A is a type of BJT and RF transistor which is used for a wide range of applications. It has a wide gain bandwidth and can operate in a variety of temperature ranges. It has a higher maximum collector current than other BJT transistors, and is designed to operate at higher temperatures. This makes it an ideal choice for use in linear and non-linear applications, low noise amplifiers (LNA) and output drivers, as well as in audio applications such as CD and MP3 players. It can be used in both narrow-band and wide-band applications, making it a versatile choice for use in multiple devices.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NE662M04-EVNF09 | CEL | 0.0 $ | 1000 | EVAL BOARD FOR NE662M04 9... |
NE662M04-A | CEL | 0.0 $ | 1000 | RF TRANSISTOR NPN SOT-343... |
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NE662M04-EVNF16 | CEL | 0.0 $ | 1000 | EVAL BOARD FOR NE662M04 1... |
NE662M04-EVNF19 | CEL | 0.0 $ | 1000 | EVAL BOARD FOR NE662M04 1... |
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