NM93CS06M8 Allicdata Electronics
Allicdata Part #:

NM93CS06M8-ND

Manufacturer Part#:

NM93CS06M8

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC EEPROM 256 SPI 1MHZ 8SO
More Detail: EEPROM Memory IC 256b (16 x 16) SPI 1MHz 8-SO
DataSheet: NM93CS06M8 datasheetNM93CS06M8 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256b (16 x 16)
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Memory Interface: SPI
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Base Part Number: NM93CS06
Description

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NM93CS06M8 Application Field and Working Principle

NM93CS06M8 is an 8-bit static random access memory (SRAM) manufactured by Fairchild Semiconductor in 1975. It is a bipolar device, made of complementary p-channel and n-channel metal oxide semiconductor (MOS) transistors. The chip has eight 256 bit words and requires a single +5V power supply. It is designed for use in general memory applications and is compatible with other memory systems, such as PLA and ROM.

Application field of NM93CS06M8

The NM93CS06M8 is a static random access memory (SRAM) chip, making it ideal for use in memory-intensive applications that require fast read and write times. Examples of such applications include:

  • Computer systems, such as CPUs, CPUs caches, and bus control logic.
  • Industrial automation, such as process and machine control.
  • Consumer electronics, such as gaming consoles.
  • Telecommunications, such as base station and switch hardware.

Working Principle of NM93CS06M8

The NM93CS06M8 is an 8-bit static random access memory (SRAM) chip. SRAM chips are much faster than other types of memory chips, such as DRAM, but consume more power. An SRAM works by using two different logic states (0 and 1) to store data. These two logic states are represented by different voltages on two different transistors, which are part of a cell. When a read or write operation is triggered, the two transistors in the cell will switch between the two logic states based on the input voltage, thus reading or writing the data.

The NM93CS06M8 chip has eight 256-bit words, which allow it to hold up to 2048 bits of data. It also has an input/output line and three chip selects (CS1, CS2, and CS3). CS1, CS2, and CS3 are used to select which word is to be read or written, allowing the chip to be used in combination with other memory chips or systems. For example, it could be used with a read only memory (ROM), a programmable logic array (PLA), or a microprocessor.

The NM93CS06M8 is a bipolar device, meaning it uses both n-channel and p-channel MOS transistors. The two types of transistors differ in terms of how current is conducted through them. In the case of the NM93CS06M8, the two types of transistors are used to maintain the two logic states needed for operation. The two logic states are created by applying a positive or negative voltage to the chip, which turns on the corresponding type of transistor in the cell.

The NM93CS06M8 requires a single +5V power supply and is designed for use in general memory applications. It is a reliable device, with a typical access time of 500 ns, making it fast enough for most applications. The chip also has a low power consumption, making it ideal for battery-powered devices.

Conclusion

The NM93CS06M8 is an 8-bit static random access memory (SRAM) chip manufactured by Fairchild Semiconductor in 1975. It is designed for use in general memory applications and is compatible with other memory systems, such as PLA and ROM. Its low power consumption and fast read and write times make it ideal for use in a variety of applications, such as computer systems, industrial automation, consumer electronics, and telecommunications.

The memory chip operates by using two different voltage levels to store data. The two logic states are created by applying a positive or negative voltage to the chip, which turns on the corresponding type of transistor in the cell. The NM93CS06M8 is a reliable device, with a typical access time of 500 ns, making it suitable for most applications.

The specific data is subject to PDF, and the above content is for reference

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