NM93CS46LEN

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	1Kb (64 x 16)
Clock Frequency:	250kHz
Write Cycle Time - Word, Page:	15ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Through Hole
Package / Case:	8-DIP (0.300", 7.62mm)
Supplier Device Package:	8-DIP
Base Part Number:	NM93CS46

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Memory Application Field and Working Principle of NM93CS46LENNM93CS46LEN is a static random access memory (SRAM) chip commonly used in embedded systems and other computing environments requiring non-volatile memory. It is a versatile memory device that provides significant advantages for a wide array of applications.The NM93CS46LEN has eight 512-bit words of true non-volatile storage, allowing richly designed software to expand over a wide range of application types. Using low-power consumption and its non-volatile nature make the NM93CS46LEN an ideal choice for use in embedded systems, telecommunication, consumer goods, and industrial devices, as well as any other applications requiring a reliable source of data storage.The NM93CS46LEN can operate synchronously or asynchronously with a system clock, and offers multiple timings and voltages, making it suitable for a diverse range of applications. It also offers an asynchronous direct chip enable (DCE) mode, which provides an enhanced user experience and improved performance.The NM93CS46LEN has an extended temperature limit range of -40°C to +85°C, providing an operating range suitable for harsh environmental conditions. Additionally, the NM93CS46LEN is a low power device, consuming only 3.6 mW at 5 V for the same performance as an 8 MegaBit NM93CS46LEN.The NM93CS46LEN has a number of features that make it highly suitable for use in a variety of applications. These include its low power consumption, wide temperature range, multiple timings, direct chip enable (DCE) mode, and powerful error-correction code (ECC) mechanism.The NM93CS46LEN uses a flip-flop based chip architecture. This consists of two Transistor and Capacitor memory cells (TCM), connected in a series configuration. This provides the chip with its non-volatile nature; once the data is written to the TCM, it will remain there, until the chip is powered off. When powered back up, the TCM cell requests a read operations, the MTU (Memory Transfer Unit) and the SRAM controller then execute the read operation.When writing data to the NM93CS46LEN, write operations are performed by the MTU and the SRAM controller. Data is written to the TCM and this also serves as an indicator to the controller to read or write data. The SRAM controller then performs the read or write operation and examines the data before writing or reading the data.The NM93CS46LEN supports low-power and fast random access. The low-power mode is useful for battery operated applications, such as those in medical and wearable devices, while the fast random access features are beneficial for time-critical operations, such as network and multimedia communication.The NM93CS46LEN also offers a number of advanced features. These include error-correction code (ECC) which provides enhanced reliability and data integrity via error detection and error correction. Additionally, the NM93CS46LEN is capable of operating in the asynchronous direct chip enable (DCE) mode, which is beneficial for users who perform multiple RAM accesses within a single system clock cycle.Overall, the NM93CS46LEN is a versatile, versatile and reliable non-volatile memory chip which is suitable for use in a wide range of applications. The NM93CS46LEN offers a range of timing and voltage options, low-power consumption, wide temperature range, powerful ECC mechanism and asynchronous direct chip enable (DCE) mode. It is a reliable storage solution which can be relied upon to provide the performance and reliability demands of today’s various embedded, consumer and industrial applications.

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