NP110N04PUG-E1-AY Allicdata Electronics
Allicdata Part #:

NP110N04PUG-E1-AY-ND

Manufacturer Part#:

NP110N04PUG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V MP-25ZP/TO-263
More Detail: N-Channel 40V 110A (Tc) 1.8W (Ta), 288W (Tc) Surfa...
DataSheet: NP110N04PUG-E1-AY datasheetNP110N04PUG-E1-AY Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 25700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 390nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NP110N04PUG-E1-AY is a N-Channel Enhancement Mode MOSFET. It can be used for a wide range of applications due to its low resistance, superior gate charge characteristics, and relatively low capacitance. The MOSFETs have a 40V gate-source voltage with a maximum drain current of 4A. It is suitable for use in power management applications, such as DC/DC converters, motor controllers, and switch-mode power supplies.

Application Fields

The NP110N04PUG-E1-AY can be used in a wide variety of applications, such as motor control, DC/DC converters, switch-mode power supplies, and power management applications. Its low on-resistance characteristics make it an ideal choice for high-speed switching applications, as it can quickly and accurately control large amounts of current. Additionally, its superior gate charge characteristics make it more suitable for power management applications, as it can reduce power dissipation and minimize EMI.

Working Principle

The NP110N04PUG-E1-AY is a N-channel enhancement mode MOSFET, which means it is a type of transistor that is based on the principles of field-effect transistor (FET) technology. It consists of a source, a drain and a gate, and works on a principle known as the “enhancement mode”. When a positive voltage is applied to the gate, it induces a channel between the source and drain, allowing current to flow from the source to the drain.

In the case of the NP110N04PUG-E1-AY, the gate-source voltage is 40V, which induces a larger current through the drain from the source. The low on-resistance characteristics allow for faster switching between the source and drain. This allows the device to be used in high speed switching applications such as motor controllers and DC/DC converters.

Conclusion

The NP110N04PUG-E1-AY is a N-channel enhancement mode MOSFET, which is characterized by its low on-resistance, superior gate charge characteristics, and relatively low capacitance. It is suitable for use in power management applications, such as DC/DC converters, motor controllers, and switch-mode power supplies. It is a suitable choice for high-speed switching applications, as it can quickly and accurately control large amounts of current.

The specific data is subject to PDF, and the above content is for reference

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