NP110N055PUG-E1-AY

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The NP110N055PUG-E1-AY is a single n-channel MOSFET transistor that is ideal for power management and high power applications. It is an active semiconductor device that contains a number of key features, such as a high breakdown voltage, a low on-state resistance, a low gate threshold voltage, a fast switching speed, and an excellent temperature and frequency capabilities. This makes this transistor suitable for use in a range of power applications.

The NP110N055PUG-E1-AY is a single n-channel MOSFET with a maximum drain-source voltage of 55V. It can supply continuous drain current of up to 110A, with an on-state resistance of 0.14Ohm. The total gate charge Qg of this device is 17.2nC, and the gate threshold voltage Vgsth is 4.6V. With a total gate charge Qg of 17.2nC, the transistor is able to proceed quickly, allowing the device to turn on and off rapidly. The transistor also has an excellent temperature and frequency capability, with a junction to case thermal resistance of 2.4 °C/W and a maximum switching frequency of up to 100kHz. The MOSFET can be operated from a wide range of temperatures, from -55 to 125 °C.

The NP110N055PUG-E1-AY has a wide range of applications, in industrial and consumer electronics, automotive and telecom systems, power supplies, and power tools. In power supplies, it is used to regulate the voltage and current, helping to improve energy efficiency and system stability. It can be used in switching and control circuits, allowing for precise and fast control of high-power circuits. In WiFi and Bluetooth systems, the MOSFET helps to amplify the signal for better range and performance. In automotive and telecom systems, the transistor helps to regulate power and reduce the noise generated from the power supplies. The transistor is also used in power tools, such as drills and saws, to help control the power and speed of the tool.

The NP110N055PUG-E1-AY is a high-power single n-channel MOSFET transistor with excellent temperature and frequency capabilities. With its low on-state resistance and fast switching speed, this transistor is able to handle high-power applications in power supplies, switching circuits, telecom systems, and automotive systems. The wide operating temperature range, from -55 to 125 °C, makes this device suitable for a range of industrial and consumer applications. This makes it an ideal solution for many power management and high power applications.

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