NP110N04PUK-E1-AY

The NP110N04PUK-E1-AY is a single-chip enhancement type N-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) with a high-current capability and low power dissipation. It is typically used as a switch or amplifier in a wide variety of applications, including power management equipment. This article provides an overview of the NP110N04PUK-E1-AY’s application field and working principle.Application FieldThe NP110N04PUK-E1-AY was designed for applications involving the switching or amplification of power. It is used in a variety of power management devices, including switch mode power supplies and AC-DC regulators. It has a low gate charge and can be used in high-frequency switching applications, due to its excellent switching characteristics. It is also well-suited for battery powered applications, due to its low gate-drain charge. Furthermore, due to its utilization of a single chip, this device offers cost savings in terms of component size and cost.Working PrincipleThe NP110N04PUK-E1-AY works through the flow of charge carriers, either electrons or holes. When the gate voltage exceeds the threshold voltage, the device turns on and the channel forms a low-resistance path between the source and drain terminals. This allows a current to flow from the source to the drain, which can then be amplified or switched, depending on the application.When the gate voltage is lower than the threshold voltage, the device turns off and the channel does not form a low-resistance path. This keeps the source and drain terminals isolated, resulting in no current flow. The device is therefore in a “cut-off” mode, which is ideal for applications which require alternating between high and low currents.ConclusionThe NP110N04PUK-E1-AY is a low-power, single-chip metal oxide semiconductor field-effect transistor (MOSFET) with high current capability. It is typically used as a switch or amplifier in power management applications, due to its excellent switching characteristics and low gate and drain charge. The device works through the flow of charge carriers, which is controlled by the application of gate voltage. Once the gate voltage is greater than the threshold voltage, the device will turn on and current will flow from the source to the drain.

NP110N03PUG-E1-AY	Renesas Elec...	0.0 $	1000	MOSFET N-CH 30V MP-25ZP/T...
NP110N04PUG-E1-AY	Renesas Elec...	--	1000	MOSFET N-CH 40V MP-25ZP/T...
NP1100SAT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 50A SMB
NP1100SCMCT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 400A SMB
NP11		19.12 $	1000	PLIERS,11",NAIL PULLINGSt...
NP1111510000G	Amphenol Any...	3.82 $	1000	1000 TB SPR CLA 180D B/T1...
NP1100SBMCT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 250A SMB
NP110N055PUK-E1-AY	Renesas Elec...	0.0 $	1000	MOSFET N-CH 55V 110A TO-2...
NP110N055PUG-E1-AY	Renesas Elec...	0.0 $	1000	MOSFET N-CH 55V 110A TO-2...
NP1100SBT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 80A SMB
NP1100SAMCT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 150A SMB
NP1100SCT3G	ON Semicondu...	0.0 $	1000	THYRISTOR 90V 100A SMB
NP110N04PUK-E1-AY	Renesas Elec...	0.0 $	1000	MOSFET N-CH 40V 110A TO-2...