NP60N03SUG-E1-AY Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NP60N03SUG-E1-AY is a single junction field effect transistor (FET). It is a monolithic N-channel MOSFET, which is suitable for use with a wide variety of electronic devices and applications. The device is commonly used in electronic applications such as computer mainboards, circuit boards and robotics. It is suitable for high-speed switching applications with extremely low input capacitances.

The NP60N03SUG-E1-AY is a three-terminal device, with a single source, gate and drain terminal. The source terminal is connected to the source of the signal being detected, while the gate and drain terminals are used to control the signal’s flow. The drain terminal is also connected to the signal’s output point.

The NP60N03SUG-E1-AY is designed to provide high current density and low on-resistance. It is capable of operating with currents up to 30A and can carry a voltage of 60V in its on-state. Its on-resistance is typically 1.6 ohm in its on-state, providing efficient switching capability. It is an extremely reliable device, with a long MTTF rating of over 35 million hours.

The working principle of the NP60N03SUG-E1-AY is based on the MOSFETs construction. The N-channel device is composed of two layers of the semiconductor material (silicon). An insulating gate region is formed between the two layers by doping of a gate material (SiO2). When a voltage is applied, the electrons present in the channel are repelled away from the gate, thus decreasing the channel resistance and allowing current to flow from the source to the drain.

The NP60N03SUG-E1-AY has a wide range of application fields due to its superior performance. It is ideal for high-speed logic control, low-noise power regulators, switching power converters, video circuits, and automated test equipment. It is also suitable for high-performance switching applications such as home audio and communications systems. The device can also be used in a variety of industrial, communications and automotive applications.

In conclusion, the NP60N03SUG-E1-AY is a single-junction field-effect transistor suitable for use in a wide range of electronic devices and applications. It is a MOSFET device with high current density, low on-resistance, and exceptional reliability. The working principle is based on the MOSFET construction, where a voltage is applied to create an insulating gate region between two layers of the semiconductor material, which allows a current to flow from the source to the drain. The device can be used for high-speed logic control, low-noise power regulators, switching power converters, video circuits, and other industrial, communications and automotive applications.

The specific data is subject to PDF, and the above content is for reference