| Allicdata Part #: | NP60N055KUG-E1-AY-ND |
| Manufacturer Part#: |
NP60N055KUG-E1-AY |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 55V 60A TO-263 |
| More Detail: | N-Channel 55V 60A (Tc) 1.8W (Ta), 88W (Tc) Surface... |
| DataSheet: | NP60N055KUG-E1-AY Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | TO-263 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 175°C (TJ) |
| Power Dissipation (Max): | 1.8W (Ta), 88W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5600pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 9.4 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 55V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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NP60N055KUG-E1-AY is an integrated Circuit MOSFET which is commonly used in power switching applications. It is an efficient and reliable FET transistor which gives excellent performance, with an optimal level of power consumption and low output voltage drop. The application field of NP60N055KUG-E1-AY is primarily switching power systems, such as power converters, power supplies, motor controllers, and DC-DC converters, where continuous operation at high frequency is required.
The MOSFET, or metal Oxide Semiconductor field-effect transistor, is the most widely used type of transistor. It is built on a substrate comprising of either Silicon or Germanium. It consists of a channel of semiconductor material between source and drain regions, with an insulating gate electrode sitting above the channel. A gate voltage is applied to the transistor, with this causing the channel to open and allowing current to flow from source to drain.
The working principle of NP60N055KUG-E1-AY is very simple. The gate voltage applied to the MOSFET modulates the effective threshold voltage, which in turn causes the current to flow through the drain-source channel. When the voltage between the gate and the source exceeds the threshold voltage, the transistor will turn on. When the gate voltage is below the threshold voltage, the transistor will turn off. This on-off switching action is what allows the NP60N055KUG-E1-AY to be used as a power switch. The current flow through the transistor is then modulated by the gate voltage, allowing the designer to control the switching action.
In conclusion, NP60N055KUG-E1-AY is an efficient and reliable FET transistor which can be used for high frequency switching power applications. It is very easy to understand and use the MOSFET, which is why it is so widely used. It is important to remember that the switching action of NP60N055KUG-E1-AY is controlled by the gate voltage applied to the transistor, so it is important to ensure that the gate voltage is set to the desired level in order to achieve the desired action.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| NP60N04KUG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 60A TO-26... |
| NP60N055KUG-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 55V 60A TO-26... |
| NP60N04NUK-S18-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 60A TO-22... |
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| NP60N04MUK-S18-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 60A TO-22... |
| NP60N04MUG-S18-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 60A TO-22... |
| NP60N055VUK-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 55V 60A TO-25... |
| NP60N04VUK-E1-AY | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 60A TO-25... |
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NP60N055KUG-E1-AY Datasheet/PDF