NP60N055KUG-E1-AY Allicdata Electronics
Allicdata Part #:

NP60N055KUG-E1-AY-ND

Manufacturer Part#:

NP60N055KUG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 55V 60A TO-263
More Detail: N-Channel 55V 60A (Tc) 1.8W (Ta), 88W (Tc) Surface...
DataSheet: NP60N055KUG-E1-AY datasheetNP60N055KUG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 88W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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NP60N055KUG-E1-AY is an integrated Circuit MOSFET which is commonly used in power switching applications. It is an efficient and reliable FET transistor which gives excellent performance, with an optimal level of power consumption and low output voltage drop. The application field of NP60N055KUG-E1-AY is primarily switching power systems, such as power converters, power supplies, motor controllers, and DC-DC converters, where continuous operation at high frequency is required.

The MOSFET, or metal Oxide Semiconductor field-effect transistor, is the most widely used type of transistor. It is built on a substrate comprising of either Silicon or Germanium. It consists of a channel of semiconductor material between source and drain regions, with an insulating gate electrode sitting above the channel. A gate voltage is applied to the transistor, with this causing the channel to open and allowing current to flow from source to drain.

The working principle of NP60N055KUG-E1-AY is very simple. The gate voltage applied to the MOSFET modulates the effective threshold voltage, which in turn causes the current to flow through the drain-source channel. When the voltage between the gate and the source exceeds the threshold voltage, the transistor will turn on. When the gate voltage is below the threshold voltage, the transistor will turn off. This on-off switching action is what allows the NP60N055KUG-E1-AY to be used as a power switch. The current flow through the transistor is then modulated by the gate voltage, allowing the designer to control the switching action.

In conclusion, NP60N055KUG-E1-AY is an efficient and reliable FET transistor which can be used for high frequency switching power applications. It is very easy to understand and use the MOSFET, which is why it is so widely used. It is important to remember that the switching action of NP60N055KUG-E1-AY is controlled by the gate voltage applied to the transistor, so it is important to ensure that the gate voltage is set to the desired level in order to achieve the desired action.

The specific data is subject to PDF, and the above content is for reference

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