NP60N04NUK-S18-AY Allicdata Electronics
Allicdata Part #:

NP60N04NUK-S18-AY-ND

Manufacturer Part#:

NP60N04NUK-S18-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 40V 60A TO-220
More Detail: N-Channel 40V 60A (Tc) 1.8W (Ta), 105W (Tc) Throug...
DataSheet: NP60N04NUK-S18-AY datasheetNP60N04NUK-S18-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-262-3 Full Pack, I²Pak
Supplier Device Package: TO-262-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1.8W (Ta), 105W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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The NP60N04NUK-S18-AY, which is a depletion mode type N-Channel MOSFET (Transistors - FETs, MOSFETs - Single) is an advanced low voltage technology with an extremely low on-state resistance. It is mainly used in many applications from traditonal linear regulators to switched mode DC to DC and AC to DC converters.

The working principle of the NP60N04NUK-S18-AY is relatively simple. It consists of an n-type channel, which is surrounded by four n-type source and drain electrodes. Between the gate and the source electrodes, there is an oxide layer, which prevents current from flowing from the gate to the source. This oxide layer has a positive charge, which the Drain-Source current is dependent on, when a gate Voltage is applied. If no gate Voltage is present, no current can flow through the device, thus, the device is said to be "OFF". However, when a gate Voltage is present, the ability of the electrons to pass through the Oxide layer is increased and the current is increased, thus, the device is then said to be “ON”.

NP60N04NUK-S18-AY is typically used in switching applications. This means that when the device is ON, the drain to source voltage is typically low in order to reduce power dissipation. The NP60N04NUK-S18-AY is a robust MOSFET, which can operate in high frequency applications, up to 10MHz, due to its ultra-low on-resistance. Moreover, its rugged design makes it suitable for high surge voltages and overload conditions.

In addition, the NP60N04NUK-S18-AY can also be used in low voltage applications, because of its low threshold voltage. This allows for efficient operation at low gate voltages, making it ideal for automotive applications, such as fan speed control, regulator for lighting applications and level shifters.

The NP60N04NUK-S18-AY is also used in power supplies and other power applications. Its low on-resistance combined with its high current capability, makes it an ideal choice for applications such as switching power supplies, UPS systems and mobile phone chargers.

All in all, the NP60N04NUK-S18-AY is an effective and efficient depletion mode type N-Channel MOSFET, with a wide range of applications in switching, power supplies, automotive applications and low voltage applications. Its low resistance and high current capability make it suitable for high frequency operation, and its ruggedness makes it ideal for high surge voltages and overload conditions.

The specific data is subject to PDF, and the above content is for reference

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