NP75N04YUG-E1-AY Discrete Semiconductor Products |
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Allicdata Part #: | NP75N04YUG-E1-AYTR-ND |
Manufacturer Part#: |
NP75N04YUG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 40V 75A 8HSON |
More Detail: | N-Channel 40V 75A (Tc) 1W (Ta), 138W (Tc) Surface ... |
DataSheet: | NP75N04YUG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | 8-HSON |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 138W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6450pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 116nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 37.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NP75N04YUG-E1-AY is a type of MOSFET (metal-oxide-semiconductor field-effect transistor). As a kind of transistor, the MOSFET is a three-terminal switch--the gate, drain, and source terminals. MOSFETs come in many varieties, but the NP75N04YUG-E1-AY belongs to a specific category of MOSFETs called "Single".
The NP75N04YUG-E1-AY MOSFET is an enhancement type MOSFET, meaning that the gate is electrically insulated from the drain and source terminals and can be charged to change the device\'s conductivity. This charge is provided by the "gate" terminal, and the conductivity modification is provided by the "source" and "drain" terminals.
When an electrical signal is applied to the gate terminal, an electric field is created between the source and drain terminals. This electric field exerts an electric force on the electrons gathered in the channel between the source and drain terminals, allowing them to move more freely or not at all. This change in the channel\'s electrical resistance allows the device to be used as an electronic switch or amplifier.
The NP75N04YUG-E1-AY MOSFET has a maximum drain source breakdown voltage of 75V, a maximum drain current of 4A, an on-state resistance of 0.0004ohms and an off-state leakage current of 1uA. It can handle currents up to 4A and can operate in temperatures up to 125°C. Its low on-state resistance and high voltage capabilities make it well suited for use in switching power supplies, digital circuits, and as a driver for high-power loads such as motors, relays and LEDs.
The NP75N04YUG-E1-AY MOSFET is widely used in a range of applications, including power electronics, motor drive, automotive, power controllers and industrial applications. Due to its low on-state resistance, it is widely used in low-power applications such as switches, logic circuits and power supplies. It can also be used in higher-power applications such as motor drive and AC/DC converters. It is also used in automotive applications such as gate drivers, DC/DC converters and ECUs.
The NP75N04YUG-E1-AY MOSFET is a versatile component with a range of applications, but its primary advantage is its ability to efficiently switch high currents under low voltages with very low power dissipation.
The specific data is subject to PDF, and the above content is for reference
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