NP75P03YDG-E1-AY Discrete Semiconductor Products |
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Allicdata Part #: | NP75P03YDG-E1-AYTR-ND |
Manufacturer Part#: |
NP75P03YDG-E1-AY |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET P-CH 30V 75A 8HSON |
More Detail: | P-Channel 30V 75A (Tc) 1W (Ta), 138W (Tc) Surface ... |
DataSheet: | NP75P03YDG-E1-AY Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-SMD, Flat Lead Exposed Pad |
Supplier Device Package: | 8-HSON |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 138W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 141nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 37.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NP75P03YDG-E1-AY is a N-channel power MOSFET that is specifically designed for applications in power converters and motor control. The device is manufactured with a high-density cell array that ensures excellent switching characteristics and very low on-resistance. In addition, it has excellent threshold voltage, gate charge and output characteristics. The device has an avalanche rating of 1.8V, which makes it suitable for applications in a variety of extreme operating conditions.
Applications
The NP75P03YDG-E1-AY is highly suitable for many different applications in the automotive, telecommunications, industrial, and consumer electronics fields. It is often used in switching power converters, motor drivers, motor control circuits, high efficiency LED lighting applications, and other power delivery systems. For example, the device is commonly used in applications such as motor control, power factor correctors, auxiliary power supplies, LED lighting, DC-DC and AC-DC converters.
Working Principle
The NP75P03YDG-E1-AY is a power MOSFET that operates on a voltage-driven principle. When a voltage is applied to the gate of the device, it creates a depletion region in the channel between the drain and source. This causes a current to flow from the drain to the source, passing through the MOSFET’s body. The device’s on-resistance is determined by the size of the channel and is controlled by the gate voltage.
The device also has an Avalanche Rating of 1.8V, which ensures high reliability in applications where inductive loads are present. When used in switching power converters, the device has excellent high-speed switching capability and low total gate charge. This reduces switching loss and improves the overall efficiency of the circuit.
In addition, the device’s integrated body diode ensures a safe operating state when the device is not actively switching on and off. This helps to protect the circuit and reduce the risk of damage in case of an interruption in the power supply.
Conclusion
The NP75P03YDG-E1-AY is an excellent choice for applications that require a reliable power MOSFET with low on-resistance and high speed switching capability. The device provides excellent performance in a wide variety of power delivery applications and is also suitable for use in extreme operating conditions. With its integrated body diode and its high avalanche rating, it provides excellent protection against power disruptions and other faults.
The specific data is subject to PDF, and the above content is for reference
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