NP75P04YLG-E1-AY Allicdata Electronics

NP75P04YLG-E1-AY Discrete Semiconductor Products

Allicdata Part #:

NP75P04YLG-E1-AYTR-ND

Manufacturer Part#:

NP75P04YLG-E1-AY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET P-CH 40V 75A 8HSON
More Detail: P-Channel 40V 75A (Tc) 1W (Ta), 138W (Tc) Surface ...
DataSheet: NP75P04YLG-E1-AY datasheetNP75P04YLG-E1-AY Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-HSON
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Power Dissipation (Max): 1W (Ta), 138W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.7 mOhm @ 37.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NP75P04YLG-E1-AY transistor is a FET single transistor that is preferred by engineers and technicians due to its ideal use in a wide range of applications. This is a MOSFET single transistor which has many advantages over comparably priced alternatives. The circuit design with its minimum/maximum current rating and gate capacitance ensures that this transistor is efficient, reliable and robust enough for applications that call for its unique performance.

One of the main applications of this transistor is in switching circuits, both digital and analog. It is ideal for controlling and driving the load in various electronic systems that use low voltage and current levels. This MOSFET has an excellent linear transfer characteristic and it can switch a very small amount of current for a given gate voltage. This makes it an ideal choice for precision power control and drives in precision circuits. It is also ideal for use in signal processing, signal conditioning and low-noise audio applications. Another common application is that of signal modulation, where it can be used as a signal source in signal modulation schemes.

The working principle of the NP75P04YLG-E1-AY is based on the typical FET MOSFET. It works by converting an input signal into a current or voltage drop at the drain terminal. This is done by increasing the resistance between the source and drain terminals. The gate voltage determines the amount of drain-to-source resistance and, thus, the amount of current flowing through the device. This makes it perfect for use in both low-noise and high-power circuits.

The various benefits of the NP75P04YLG-E1-AY make it an ideal choice for a wide range of applications. It is highly durable, with a maximum DC drain current of 75 mA and VDS max of 43V. This MOSFET transistor has excellent linear transfer characteristics and is ideal for signal processing and signal modulation schemes. In addition, it has very low on-resistance, meaning that it can switch a very small amount of current for a given gate voltage. Moreover, its small gate capacitance ensures that this transistor is suitable for precision circuits and power control.

Overall, the NP75P04YLG-E1-AY is a robust and reliable FET single transistor, ideal for use in a wide range of applications. It is preferred for its linear transfer characteristics, low drain-source resistance, small gate capacitance and robustness. Professional engineers and technicians rely on this transistor for its performance and longevity in various electronic systems.

The specific data is subject to PDF, and the above content is for reference

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