NTB30N06G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	88.2W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	46nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	42 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	27A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTB30N06G is a type of metal-oxide semiconductor field-effect transistor (MOSFET). It is an insulated-gate field-effect transistor which operates like a conductive switch. This type of MOSFET has a single drain and source, which makes them ideal for many applications.The NTB30N06G has a maximum Drain-Source Resistance of 300mΩ (Rds), which makes it suitable for numerous power management applications. By varying the voltage between the gate and the source, the current through the drain and source can be adjusted. This device also has a maximum Drain Current (Id) of 30A, a Drain-Source Voltage (Vds) of 60V and a Gate-Source Voltage (Vgs) of up to 20V. The maximum Power Dissipation (Pd) is 222 Watts, which makes it suitable for a wide range of power applications.The main characteristics of the NTB30N06G are its low Rds, high Id and its ability to handle a large amount of power in a small package. This device is well suited for power supply applications such as DC-DC converters, DC motor control and switching power supplies. It is also suitable for use in other types of power electronics, including lighting, small appliances, HVAC systems, monitors, automotive electronics and others.The working principle behind this device is a simple one. A voltage applied between the gate and the source causes the channel between the drain and the source to be “opened”, allowing current to flow. This current passes through the drain and then to ground. By changing the voltage applied to the gate, the current through the drain and source can be controlled. This makes the NTB30N06G an ideal choice for applications which require precise control over current levels.In conclusion, the NTB30N06G is a type of MOSFET which is ideal for power management applications. It has a maximum Drain-Source Resistance of 300mΩ, a maximum Drain Current of 30A and a maximum Drain-Source Voltage of 60V. This device has the ability to handle a large amount of power in a small package and is well suited for use in various power electronics systems such as DC-DC converters, DC motor control and switching power supplies. The working principle behind this device is simple: a voltage applied between the gate and the source causes the channel between the drain and the source to be “opened”, allowing current to flow. By changing the voltage applied to the gate, the current through the drain and source can be controlled.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description