NTB35N15T4G Discrete Semiconductor Products

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NTB35N15T4G is an enhancement-modeField Effect Transistor (FET) which is usually used in MOSFET (Metal Oxide Semiconductor FET) applications. This particular FET is manufactured by On Semiconductor, and is part of their NTB35N15 product family. It is a single N-Channel enhancement mode FET which offers excellent high frequency performance, high gate-blockage voltage and high output power.

In the NTB35N15T4G FET, the drain and source are the two primary terminals. The gate terminal is typically used to control the current flowing between the drain and source due to an electric field induced by the gate voltage. The gate is used to control the amount of flow of electrons between the drain and source. This corresponds to the drain current, which is known as the Id. The gate voltage is typically applied to the gate terminal so that it forms a negative potential with respect to the source terminal.

The working principle of the NTB35N15T4G FET is quite simple. As the gate voltage increases above the threshold voltage (typically 4 - 6V), the channel between the source and drain is opened, allowing electrons to flow between the two. As the gate voltage increases further, the channel widens, allowing for more current to flow. The opposite occurs when the gate voltage is decreased below the threshold voltage, where the channel stops conducting current as the gate voltage becomes more negative.

One key application of NTB35N15T4G FET is in power supply designs. The off-state output blocking capability and low on-state resistance is suitable for AC/DC and DC/AC power converters, DC transformers, switching regulators and motor control applications. Additionally, the device can also be used in low-side switches of multi-phase systems, load switches and operation amplifiers in instrumentation circuits. This particular FET is suitable for operation at high temperature up to 175°C which is a major advantage over other FETs which are limited to operating temperatures of 125°C

In conclusion, the NTB35N15T4G FET is an effective device for power supply design applications, due to its increased temperature capability and excellent high frequency performance. The device operates based on a simple gate voltage principle, and can offer excellent gate-blockage voltage, along with high output power. Furthermore, its low on-state resistance and off-state output blocking capability make it suitable for use in various power supply design applications.

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