NTB30N06L Allicdata Electronics
Allicdata Part #:

NTB30N06L-ND

Manufacturer Part#:

NTB30N06L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 30A D2PAK
More Detail: N-Channel 60V 30A (Ta) 88.2W (Tc) Surface Mount D2...
DataSheet: NTB30N06L datasheetNTB30N06L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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Silicon N-MOSFETs or metal-oxide-semiconductor field-effect transistors (MOSFETs) are a type of transistor that relies on a digital gate to control current flow. The 30N06L specifically is a 60-volt power MOSFET typically used in battery chargers, DC-DC converters, and motor drives.The 30N06L MOSFET is capable of transforming the operating voltage of an electric circuit while operating at a relatively low voltage over a wide range of temperatures and frequencies.The 30N06L consists of a metal-oxide-semiconductor structure with one N-channel. This MOSFET is characterized by its low ON-resistance (Rdson), low gate charge (Qg), and high speed switching capability. The 30N06L also has superior avalanche energy handling capability making it suitable for high current, high voltage applications. The 30N06L functions by having an electric field control the current flow between the source and the drain. The electric field strength is determined by the gate voltage. The gate, which is the control terminal, is insulated from the other terminals making it possible to apply a voltage to the gate, while the other terminals are at a different voltage.When a voltage is applied to the gate, it creates an electric field that modulates the current flow between the source and the drain. At a negative gate voltage, the current between the source and the drain is blocked, while at a positive gate voltage, the current is allowed to flow through.The 30N06L has a low Rdson making it ideal for applications that require switching between high and low current states. This low Rdson requires less power to switch between states which makes it ideal for applications that may be powered by small batteries. The MOSFET is also characterized by its superior avalanche energy handling capability which makes it suitable for high current applications.Additionally, the 30N06L features low gate charge, which is the amount of energy required to turn the transistors from on to off or from off to on states. This low gate charge makes the MOSFET capable of switching at high frequencies and allows for more efficient integration into the circuit.Overall, the 30N06L MOSFET is a great choice for applications that require low power for switching, high current capability and high frequency switching. Applications that this MOSFET is suitable for include battery chargers, DC/DC converters, motor drives, and high-power amplifiers. The 30N06L MOSFET is a great choice for applications requiring reliable high current and high frequency switching capability.

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