NTBV25P06T4G

The NTBV25P06T4G is one of the most renowned and powerful MOSFETs that is widely used across a number of industrial applications. This device is particularly helpful for blocking, amplification, and swithing applications. It is typically used in high voltage and high current switching applications. This device is typically found in power electronics, automotive, industrial, and consumer electronics applications.The NTBV25P09T4G is the new and improved version of the NTBV25P06T4G that features a higher resistance and higher drain current than the predecessor. It is typically used in high voltage/high current switching applications due to its robust characteristics. This device can withstand a drain-to-source voltage of 25V and its peak drain current is 25A.The NTBV25P06T4G utilizes an advanced form of metal-oxide-semiconductor field-effect-transistor (MOSFET) technology. This type of transistor is a three-terminal device that consists of a gate, source, and drain. The gate terminal is used to control the operation of the transistor by controlling the electric field across the device. The source and drain terminals allow current to flow through the device. When a voltage is applied to the gate terminal, the electric field can alter the channel profile between the source and drain terminals, allowing current to flow or causing the device to block the current. The source and drain are reinforced with ohmic contacts. The NTBV25P06T4G is a single, insulated-gate field effect transistor (IGFET) with a drain-to-source breakdown voltage of 25V and a peak drain current of 25A. It has a maximum power dissipation of 39W and a gate-to-source voltage of 12V. Its drain-to-source resistance is 8.2mΩ when the gate-to-source voltage is 4.5V. Its RDS(on) is 7.3mΩ at 4.5V.The NTBV25P06T4G features high-speed switching characteristics with a fast switching speed of 17ns and a low turn-on delay time of 10ns. It also features low on-resistance and low gate charge, making it highly efficient and beneficial for applications needing fast switching and power energy savings. Additionally, this device is extremely reliable and has a long lifespan, making it a great choice for applications that require long-term stability.The working principle of the NTBV25P06T4G is based on the basic electric field transistor structure. When a voltage is applied to the gate terminal, an electric field is generated which changes the channel profile between the source and drain terminals. This allows the current to flow or blocks it, depending on the voltage applied. This transistor is fast and efficient, and its high voltage and current capability make it suitable for a wide range of applications.Overall, the NTBV25P06T4G is an extremely reliable and efficient insulated gate field effect transistor that is commonly used in a variety of industrial applications. Its high voltage and current capability and fast switching speed make it a great choice for power electronics, automotive, industrial, and consumer electronics applications.

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