NTBV5605T4G Discrete Semiconductor Products |
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Allicdata Part #: | NTBV5605T4GOSTR-ND |
Manufacturer Part#: |
NTBV5605T4G |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 60V 18.5A D2PAK |
More Detail: | P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D2... |
DataSheet: | NTBV5605T4G Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 0.50668 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 140 mOhm @ 8.5A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 18.5A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The NTBV5605T4G MOSFET is a type of field effect transistor (FET) that is widely used in electronics. It is a single-channel n-channel enhancement mode MOSFET that has a voltage rating of 30V with respect to the source and the drain. This type of transistor is useful in a variety of applications due to its robustness and versatility. In this article, we will discuss the application field of the NTBV5605T4G MOSFET and its working principle.
Application Field
The NTBV5605T4G MOSFET is often used in applications that involve power switching. It can be used to control the flow of electricity in circuits, switches and amplifiers. It can also be used in power supply circuits, DC-DC converters, as well as voltage regulators. This type of transistor is also used in high speed switching applications, such as switching low voltage DC signals with a large current capability.
The NTBV5605T4G MOSFET is also used in battery charging circuits due to its high frequency switching capabilities. It can be used to charge the batteries efficiently and quickly, ensuring that the batteries are charged quickly. Additionally, it is used in automotive applications, such as electric door lock systems and speedometers. This type of transistor is also used in various AC-DC and DC-DC high-voltage switching applications.
Working Principle
The NTBV5605T4G MOSFET works on the principle of capacitance. It consists of a metal oxide layer (the gate oxide) which separates the source and drain terminals. The gate oxide creates an insulating barrier between the source and drain. When a voltage is applied to the gate oxide, it increases the capacitance between the source and drain. This, in turn, increases the flow of electric current between the source and drain.
The gate oxide also acts as a field-effect transistor, allowing the control of the flow of current through the channel of the MOSFET. By controlling the voltage applied to the gate oxide, the current flow through the channel can be controlled. This makes the NTBV5605T4G MOSFET an extremely versatile and powerful type of transistor, making it suitable for a wide range of applications.
In summary, the NTBV5605T4G MOSFET is a powerful single-channel, n-channel enhancement mode FET that is widely used in various applications. It is capable of controlling the flow of electric current in various circuits, switches, regulators and amplifiers. It is also used in power-switching applications as well as AC-DC and DC-DC high-voltage switching. Its working principle revolves around the capacitance created between the source and drain terminals by the gate oxide, allowing the control of the current flow.
The specific data is subject to PDF, and the above content is for reference
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