NTBV75N06T4G Allicdata Electronics
Allicdata Part #:

NTBV75N06T4G-ND

Manufacturer Part#:

NTBV75N06T4G

Price: $ 1.71
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 75A D2PAK
More Detail: N-Channel 60V 75A (Ta) Surface Mount D2PAK
DataSheet: NTBV75N06T4G datasheetNTBV75N06T4G Datasheet/PDF
Quantity: 1000
800 +: $ 1.53644
Stock 1000Can Ship Immediately
$ 1.71
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4510pF @ 25V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The NTBV75N06T4G is a metal-oxide-semiconductor field-effect transistors (MOSFETs) from Vishay Siliconix. It is categorized as a single MOSFET as opposed to an N-channel dual MOSFET. In use, these devices serve as electronic switches or amplifiers.

MOSFETs are a type of transistor that use an insulated gate to control current flow. The insulated gate is electrically isolated from both the source and the drain. This insulated gate can be used to control the voltage between the drain and the source, effectively switching current on or off. This makes them extremely useful in amplifying or switching circuits.

In the case of the NTBV75N06T4G, it is a single MOSFET with N-channel configuration. The key physical features of this MOSFET are as follows: it has a maximum drift region voltage of 75V and a maximum drain-source voltage of 60V. Its drain current is rated at 75A, its drain-source on-resistance is 25 mOhm and its threshold voltage is 1.7V. Its operating temperature range is from -55°C to 175°C, and it can be used up to a frequency of 5MHz.

At the heart of this MOSFET is a three-terminal voltage-controlled switch, with the main terminal enabling the gate current to control drain-source current. The NTBV75N06T4G uses a vertical DMOS structure, meaning that the main terminal connects directly to the drain, through a vertical element. It features low on-resistance between the drain and the source terminals, which means it is well-suited to power switching applications, since it has a fast switching speed with less power dissipation.

The NTBV75N06T4G can be used in a variety of applications, including motor control, power supply, lighting, and portable device or battery charging. It is most often used in switching power supplies and electronic ballast for lighting systems. It is also used in DC-DC and AC-DC converters, generators, and in-vehicle DC-DC power supplies (for car audio, camcorder charging, or laptop computer power supplies).

In conclusion, the NTBV75N06T4G is a single N-channel MOSFET with three terminals that can be used for switching and amplification purposes. It features a maximum drift region voltage of 75V and a maximum drain-source voltage of 60V. It has a low on-resistance between the drain and the source, which makes it well-suited to power switching applications. The NTBV75N06T4G is often used in motor control, power supply, lighting, and portable device or battery charging circuits.

The specific data is subject to PDF, and the above content is for reference

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