Allicdata Part #: | NTP45N06OS-ND |
Manufacturer Part#: |
NTP45N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 45A TO220AB |
More Detail: | N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Throug... |
DataSheet: | NTP45N06 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 125W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1725pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTP45N06 is a type of single MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). It has two terminals, the source and the drain, connecting to the channel (a semiconductor material) and separated by the gate. When a voltage is applied across the source and drain, the electric field generated by the voltage will affect the way electrons move through the channel, allowing current to flow through the device. This is used to control the amount of current that passes through the device and is why the term “field effect” is used when referring to this type of transistor.
The NTP45N06 is an unipolar MOSFET that is designed to operate in the highspeed switching mode. It has a low threshold voltage, making it suitable for applications where fast switching is required. The device is also very low on power consumption, making it suitable for applications that require high efficiency. The NTP45N06 also features an integrated logic level compatible gate driver circuitry that protects the device from over-voltage or over-current damage.
The NTP45N06 is used in a variety of applications such as power management, DC motor control, lighting control, and data communications. In any of these applications, the NTP45N06 is used as a switch to provide power to components, or to control the flow of current between components. The NTP45N06 is an ideal choice for applications that require high reliability and low power consumption.
The working principle of the NTP45N06 is based on the principle of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) technology. The device has two terminals, source and drain, separated by a gate. When a voltage is applied across the source and drain terminals, an electric field is generated which affects the way electrons move through the channel, allowing current to flow through the device. This is used to control the amount of current that passes through the device, allowing for precise control of current through it.
The NTP45N06 is a very useful and efficient device for a wide range of applications. It has a low threshold voltage, making it ideal for applications that require fast switching, and its optimized performance has made it ideal for power management and DC motor control applications. Additionally, its integrated logic level compatible gate driver circuitry protects the device from over-voltage or over-current damage, making it suitable for applications that require high reliability.
In conclusion, the NTP45N06 is a type of single MOSFET designed to operate in the high-speed switching mode. It has a low threshold voltage and is used in a wide range of applications such as power management, DC motor control, lighting control, and data communications. Additionally, its optimized performance and integrated logic level compatible gate driver circuitry provides the device with high reliability, making it ideal for applications that require high accuracy and less power consumption.
The specific data is subject to PDF, and the above content is for reference
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