NTP45N06L Allicdata Electronics
Allicdata Part #:

NTP45N06LOS-ND

Manufacturer Part#:

NTP45N06L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 45A TO220AB
More Detail: N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Throug...
DataSheet: NTP45N06L datasheetNTP45N06L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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N-channel Enhancement Mode MOSFETs are commonly used in a wide range of applications, including signal processing, power management, communications, storage and switching. The NTP45N06L is an ideal solution for these applications due to its exceptional performance capabilities. This article will discuss the application field and working principle of the NTP45N06L MOSFET.

The NTP45N06L is a N-Channel Enhancement Mode MOSFET with a maximum drain-source on-state resistance of 45mohms and a maximum drain current of 9A. It is available in a TO-220 package and is optimized for low on-state resistance. The device can accommodate high voltage supplies up to 150V and has a maximum drain-source voltage of 60V. It has a maximum VGS of 28V and a maximum Rds(on) (Drain-Source On Resistance) of 45mohms.

The NTP45N06L can be used in a variety of applications, including power management, signal processing, communications, storage and switching. It is particularly well-suited for applications where high voltage supplies are present, such as solar charge controllers, renewable energy storage systems and motor controls. Additionally, its low on-state resistance makes it ideal for high current applications, such as power amplifiers, power supplies, and home theatres.

The NTP45N06L MOSFET is a three-terminal device, consisting of a source, gate, and drain. The source and gate are connected to two terminals on the device, while the drain is connected to a third terminal. When a suitable voltage is applied to the gate, the MOSFET will turn on and the drain terminal will be opened. To turn the device off, the voltage applied to the gate is removed. This allows the MOSFET to act as a switch, controlling the flow of electrical current in the circuit.

The NTP45N06L MOSFET also has a body diode that allows current to flow in only one direction. This diode acts as a protection mechanism, preventing reverse current flow and preventing the device from being damaged. Additionally, the MOSFET has built-in protection against electrostatic discharge, which ensures that it remains functioning properly even in harsh conditions.

In conclusion, the NTP45N06L MOSFET is a versatile, reliable device that can be used in a wide range of applications. Its high current capabilities and low on-state resistance make it ideal for power management, communications, storage, and switching applications. Additionally, its built-in protection features ensure that it will operate reliably in even the most demanding environments.

The specific data is subject to PDF, and the above content is for reference

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