NTP4813NLG Allicdata Electronics
Allicdata Part #:

NTP4813NLG-ND

Manufacturer Part#:

NTP4813NLG

Price: $ 0.81
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 40A TO220
More Detail: N-Channel 30V 10.2A (Ta) 2.4W (Ta), 60W (Tc) Throu...
DataSheet: NTP4813NLG datasheetNTP4813NLG Datasheet/PDF
Quantity: 1000
300 +: $ 0.72450
Stock 1000Can Ship Immediately
$ 0.81
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13.1 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 11.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 12V
FET Feature: --
Power Dissipation (Max): 2.4W (Ta), 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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NTP4813NLG is a discrete Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for use in applications that require low on-state resistance and high off-state breakdown voltage. It belongs to the single Large Gate ( LG) type of FETs, which features excellent current gaining capability, high macroscopic efficiency, and wide operating temperature range.The main components in the NTP4813NLG are the metal gate contacts, doped silicone substrate and drain contact. A metal gate contact is used to make electrical contact between the field effect transistor’s metal gate and its source and drain terminals, whereas the doped silicone substrate provides insulation between the metal gate contacts and the drain contact. The drain contact allows the transistor to switch between on and off states by providing the necessary current. The metal gate contact is further covered by a thin dielectric layer, which helps reduce the gate capacitance by providing a wide spacing between the source and drain contacts.The NTP4813NLG is used in applications requiring a low on-state resistance and high off-state breakdown voltage. Its low resistance in on-state enables it to be used as a switch in low voltage and high current applications. Its high off-state breakdown voltage makes it suitable for applications where enhanced high-voltage blocking capability is required.In addition, its large gate size offers an increased current handling capacity, which is particularly advantageous for applications requiring continuity in the load current. In addition, the device is highly temperature stable and its excellent temperature characteristics make it suitable for use in a wide range of temperatures ranging from -40°C to +120°C.In terms of its working principle, the Transistor operates by controlling the current from source to drain, depending on the voltage of its gate. When the gate voltage is low, or in the ‘off’ state, no current can flow and the transistor is effectively ‘off’. When the gate voltage is increased, the MOSFET can then switch the transistor ‘on’ and allow the current to flow freely through it, thus turning the device into an amplifier.Lastly, the NTP4813NLG is not only versatile and easy to use, but provides a highly efficient and reliable performance in extreme temperature environments. Its good electric parameters and remarkable temperature characteristics make it an ideal choice for automotive and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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