NTP75N03L09

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NTP75N03L09 is a single n-channel enhancement-mode Power MOSFET, manufactured using advanced trench technology, which has been especially tailored to minimize on-state resistance. It is designed to minimize the switching losses in Power Conversion applications, such as motor control, Switched Mode Power Supply (SMPS) and DC to DC converter. The device is characterized by low threshold voltage, fast switching speed and low gate drive power.

The device has a core process technology which consists of an optimized cell design, a proprietary layout and cell structure, and dedicated well contact technologies. The core process technology is designed to minimize the parasitic capacitances of the device while still providing a high level of robustness and reliability.

This MOSFET features an ultra low on-resistance, low gate drive power, low threshold voltage and high transition frequency. It also features soft turn-on, fast switching speed, low Miller capacitance, reverse drain current protection and improved ESD immunity. The MOSFET also features a low gate resistance, low power dissipation, and low avalanche energy.

The NTP75N03L09 is designed with a highly reliable process which ensures repeatable and dependable operation even under extreme conditions. The device also has low gate input capacitance and low Coss, which reduces switching losses and improves the device’s transition times.

The main application for the NTP75N03L09 is as an enhancement-mode switching element in power conversion applications, such as SMPS, motor control, DC/DC converters and other high power applications. The device is also suitable for use in a wide range of other switching applications including consumer, automotive, industrial and military applications.

The working principle of the NTP75N03L09 is based on an electrochemical principle known as the “MOSFET Enhancer”. When the MOSFET is used in its enhancement-mode configuration, the gate/substrate junction acts as a capacitor. When a positive voltage is applied to the gate, a charge is transferred to the substrate causing an inversion layer to form in the substrate below the gate. This inversion layer allows current to flow between the source and drain terminals when a voltage is applied to the drain.

The NTP75N03L09 is an enhancement-mode Power MOSFET which provides a low on-state resistance, fast switching speeds and low gate drive power. It is designed for use in a wide range of applications where low on-state resistance is required. It is suitable for use in consumer, automotive, industrial and military applications, as well as for use in power conversion applications.

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