Allicdata Part #: | NTP75N06OS-ND |
Manufacturer Part#: |
NTP75N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 75A TO220AB |
More Detail: | N-Channel 60V 75A (Ta) 2.4W (Ta), 214W (Tj) Throug... |
DataSheet: | NTP75N06 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 214W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 37.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTP75N06 is a kind of power metal–oxide–semiconductor field-effect transistor (MOSFET) produced by ON Semiconductor. The type of element is N-channel enhancement mode MOSFET. It belongs to the single MOSFET category in transistors. With the special structure and working principle, NTP75N06 has a great application scope.
NTP75N06 is featured by its low on-resistance (RDS(on)). RDS(on) of NTP75N06 is 55 mΩ when the drain-source voltage is 8 V and gate-source voltage is 4.5 V, which is low enough for light load. Besides, it is a fast-switching device, with fast turn-on and turn-off time. This makes it suitable for high frequency applications. Besides, the Static drain-source on-resistance (RDS(on)) temperature coefficient of NTP75N06 is very low. Therefore, it can be applied in applications with over temperature constraints.
The structure of power MOSFET is simple, with a signal gate and a source which transmit the signal, a drain which connects voltage source, and a body diode which can reduce the leakage current. The working principle is basically due to the electrostatic force created by the signal gate and the source. When the signal gate is activated, a strong electrostatic force is created between the source and the gate, which will draw strong electrons from the substrate to the gate. And then, majority carriers will be running from the gate to the drain, resulting in the drain-source voltage drop. In addition, the magnitude of the electrostatic force is depending on the size of the current in the signal gate, therefore, the drain-source voltage is adjustable by the size of the signal current.
NTP75N06 is a great choice for several applications. It can be used as load switch to drive inductive loads such as motors, lamps and heaters. It is also suitable for power converters and motor control applications. Due to its low on-resistance RDS(on) and the fast switching time, it is applicable in high frequency converters. Furthermore, it is also applicable in buck-boost power converter, a type of power converter which is used to maintain the output voltage constantly and increase reliability. Other application includes over temperature protection devices, backlight and display power management, and low voltage drop rectifier.
In summary, NTP75N06 is a kind of power MOSFET belongs to the single MOSFET category of transistors. Due to its static drain-source on-resistance (RDS(on)) temperature coefficient and fast switching time, it is suitable for many applications such as load switch, motor control, and buck-boost converters. NTP75N06 is a reliable and efficient element for applications requiring fast, low RDS(on) MOSFET.
The specific data is subject to PDF, and the above content is for reference
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