NTP75N06G

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	2.4W (Ta), 214W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4510pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 37.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NTP75N06G is a type of ultra-low on-resistance power MOSFET device with an integrated fast-recovery diode. It is designed for use in power applications with a wide range of voltages and currents. It has the ability to operate at high switching frequencies, making it suitable for high-current, high-performance applications.The NTP75N06G is a single MOSFET that offers improved power efficiency and reliability for a range of high-power applications. It is ideal for applications such as as motor control and power supplies. Its integrated diode allows for faster switching, which results in less switching losses and improved overall efficiency.The NTP75N06G has a low on-resistance, allowing for minimal heat dissipation and operating losses. Its integrated diode offers protection from avalanche and ESD turn-on conditions, making it suitable for applications where IEC approved protection mechanisms are required.The working principle of the NTP75N06G is similar to that of a typical MOSFET. When a voltage is applied to the gate, a channel is formed between the source and the drain. This channel allows a current to flow, depending on the amount of voltage applied to the gate. The on-resistance of the MOSFET is determined by the voltage difference between the source and the drain. The higher the voltage across the two terminals, the higher the resistance and the lower the current that can flow.The NTP75N06G is constructed using advanced technology which enables it to achieve high performance with a low on-resistance. The unique construction and process of the NTP75N06G allow for fewer variation and lower leakage current at elevated temperatures, resulting in improved reliability. In addition to offering high performance, the NTP75N06G is also extremely durable, making it suitable for use in potentially harsh applications. It has a wide operating temperature range of -55 to 150C and is rated for a drain-source voltage of up to 75V, making it suitable for medium to high-voltage applications. The NTP75N06G is also RoHS-compliant, removing the need for hazardous materials in the manufacturing process.The NTP75N06G is a highly reliable and versatile MOSFET that can be used in a wide range of power applications. Its low on-resistance and integrated fast-recovery diode make it an excellent choice for high-current, high-performance applications, while its exceptional durability makes it suitable for industrial and potentially harsh applications. The NTP75N06G is a reliable and cost-effective solution for applications requiring a high level of performance and dependability.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description