NTS4101PT1G Discrete Semiconductor Products

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NTS4101PT1G, a Surface Mounted N-channel Enhancement Type MOSFET, is widely applied in low frequency circuits and power supply circuits. It is beneficial for the operation and maintenance of many commercial, industrial and home appliances.

The NTS4101PT1G MOSFET is widely used in different kinds of applications, such as battery-operated devices, power supply regulation, as well as DC-DC converters and motor drive applications such as AC motor control and robot control. Furthermore, the NTS4101PT1G MOSFET is capable of handling high-current applications, making it suitable for industrial and commercial purposes.

The MOSFET works based on the principle of a Field Effect Transistor (FET). Unlike standard Transistors, FETs operate based on the principle of an electric field. When a voltage is applied between the source and drain terminals of the MOSFET, an electric field is created that is strong enough to attract the majority of the electrons from the substrate region to the gate electrode, allowing current flow from the source to the drain terminal.

One of the features that makes the NTS4101PT1G particularly desirable is its very low on-state resistance, which makes it a great choice for power conversion and switching applications. The on-state resistance of the NTS4101PT1G is rated between 4 ohms and 16 ohms, depending on the circuit parameters and the current flow. RDS(ON) is the measure of the resistance of the MOSFET in an ON state, typically measured in Ohms.

Another great benefit of this type of MOSFET is its very low input capacitance. This is especially beneficial in circuits where a fast switching MOSFET is needed in order to avoid unwanted oscillations or unstable behavior. The NTS4101PT1G is capable of switching at very high immunity levels, making it a great choice for industrial and commercial applications. The input capacitance of the NTS4101PT1G is rated between 2.38pF and 6.63pF, depending on the gate voltage.

Additionally, the NTS4101PT1G also has a very good breakdown voltage rating, which makes it a great choice for applications running at different voltages. The NTS4101PT1G has a breakdown voltage rating of 55V, which is very high for a power MOSFET device. This allows the MOSFET to be used in distributed systems and other applications that require higher voltage levels.

Finally, the NTS4101PT1G also has very good ESD protection characteristics. This makes the MOSFET ideal for use in applications that may be exposed to high frequencies or electromagnetic interference. The NTS4101PT1G has a ESD protection rating of 200900V, ensuring reliable performance even in the harshest of conditions.

Overall, the NTS4101PT1G MOSFET is a great choice for low power circuits, as well as industrial and commercial applications. With its low on-state resistance and high breakdown voltage rating, the NTS4101PT1G is capable of handling high-current applications and provide reliable performance even under harsh conditions. In addition, its low input capacitance and excellent ESD protection characteristics make it a great choice for high frequency applications.

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