Allicdata Part #: | NTS4172NT1G-ND |
Manufacturer Part#: |
NTS4172NT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 1.6A SC70-3 |
More Detail: | N-Channel 30V 1.6A (Ta) 294mW (Ta) Surface Mount S... |
DataSheet: | NTS4172NT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 294mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 381pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.38nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 93 mOhm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTS4172NT1G can be found in numerous applications across various industries. It is a single N-channel enhancement mode field effect transistor (FET) with a low-on-resistance package, making it ideal for applications where low on-resistance is a must. In addition, the NTS4172NT1G’s rail-to-rail design makes it suitable for high speed switching as well as applications where switching times need to be as short as possible without sacrificing performance.
The NTS4172NT1G is a single FET with an N-channel enhancement mode. This means that the device controls the flow of electrical charge through the FET in a single direction. The FET’s gate is responsible for controlling the flow of electrical charge. When a signal voltage is applied to the gate, the channel resistance reduces and current can flow through the FET. The reverse is also true, if the signal voltage is removed, then the channel resistance increases and current can no longer flow.
In addition to its on-resistance package, the NTS4172NT1G has several other features that make it ideal for certain applications. One such feature is the FET’s rail-to-rail design. This means that the two sides of the FET are connected and the voltage can range from the most negative voltage to the most positive voltage in the circuit. This design helps to reduce the power consumption of the device and makes it suitable for high speed switching applications.
The NTS4172NT1G is also well-suited to applications where low on-resistance and a high switching speed are a must. In these applications, the on-resistance design helps to reduce the amount of voltage drop across the device and the rail-to-rail design helps to reduce power consumption while maintaining a low switching time. The device is typically used in logic gate applications, but its uses are numerous.
The NTS4172NT1G is a versatile and powerful single FET device. Its various features help to make it ideal for a wide range of applications and industries. Its low-on-resistance design helps to reduce voltage drop across the device, and its rail-to-rail design helps to reduce power consumption while maintaining short switching times. The device’s versatility makes it an excellent choice for numerous applications, from logic gates to high speed switching circuits.
The specific data is subject to PDF, and the above content is for reference
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