NTS4173PT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTS4173PT1GOSTR-ND |
Manufacturer Part#: |
NTS4173PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 1.2A SC70-3 |
More Detail: | P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount S... |
DataSheet: | NTS4173PT1G Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SC-70-3 (SOT323) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 290mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 10.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 1.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.The NTS4173PT1G is a single, N-channel, enhancement-mode, vertical DMOSFET transistor. It is manufactured by ON Semiconductor, one of the world\'s leading suppliers of discrete semiconductors. The device has a wide range of applications including switching, amplifying, and regulating power across a variety of technologies. The aim of this article is to provide a detailed overview of the operating principles and applications of the NTS4173PT1G.
NTS4173PT1G Basic Structure
The NTS4173PT1G is a single, N-channel DMOSFET transistor. It consists of a single-polarity N-channel MOSFET, which is built on a vertically constructed dielectric substrate. The device is housed in a package containing three leads that serve as the source, drain and gate connections. It has a breakdown voltage of 22V and a nominal drain current rating of 1A (at 25°C).
Working Principles of NTS4173PT1G
The NTS4173PT1G operates upon the principles of the MOSFET transistor. The channel of an MOSFET consists of two types of carriers: electrons (which are the majority carriers) and holes (which are the minority carriers). Upon the application of an electric field, electrons are attracted to the gate and holes are repelled from it. This results in a voltage-controlled current flow between the source and drain, as more electrons are attracted to the gate. This is known as the MOSFET\'s enhancement mode of operation.
The NTS4173PT1G finds applications in a variety of technologies. First, it can be used as a switch in digital circuitry, allowing electronic signals to be switched on and off with the application of a voltage. Second, it can be used in analog circuitry as an amplifier, by applying a small input signal to the gate and taking a larger output signal from the drain. Finally, it can also be used as a voltage regulator, by modulating the voltage between the source and drain with the application of a gate voltage.
Conclusion
In conclusion, the NTS4173PT1G is a single, N-channel, enhancement-mode, vertical DMOSFET transistor. It finds applications in a variety of technologies, including switching, amplifying, and regulating power. It operates upon the principles of the MOSFET transistor, which relies upon the application of an electric field to create a voltage-controlled current flow between the source and drain. The NTS4173PT1G is an essential component for many electrical systems and is highly reliable when used correctly.
The specific data is subject to PDF, and the above content is for reference
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