NTS4173PT1G Allicdata Electronics

NTS4173PT1G Discrete Semiconductor Products

Allicdata Part #:

NTS4173PT1GOSTR-ND

Manufacturer Part#:

NTS4173PT1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 30V 1.2A SC70-3
More Detail: P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount S...
DataSheet: NTS4173PT1G datasheetNTS4173PT1G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 290mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTS4173PT1G is a single, N-channel, enhancement-mode, vertical DMOSFET transistor. It is manufactured by ON Semiconductor, one of the world\'s leading suppliers of discrete semiconductors. The device has a wide range of applications including switching, amplifying, and regulating power across a variety of technologies. The aim of this article is to provide a detailed overview of the operating principles and applications of the NTS4173PT1G.

NTS4173PT1G Basic Structure

The NTS4173PT1G is a single, N-channel DMOSFET transistor. It consists of a single-polarity N-channel MOSFET, which is built on a vertically constructed dielectric substrate. The device is housed in a package containing three leads that serve as the source, drain and gate connections. It has a breakdown voltage of 22V and a nominal drain current rating of 1A (at 25°C).

Working Principles of NTS4173PT1G

The NTS4173PT1G operates upon the principles of the MOSFET transistor. The channel of an MOSFET consists of two types of carriers: electrons (which are the majority carriers) and holes (which are the minority carriers). Upon the application of an electric field, electrons are attracted to the gate and holes are repelled from it. This results in a voltage-controlled current flow between the source and drain, as more electrons are attracted to the gate. This is known as the MOSFET\'s enhancement mode of operation.

The NTS4173PT1G finds applications in a variety of technologies. First, it can be used as a switch in digital circuitry, allowing electronic signals to be switched on and off with the application of a voltage. Second, it can be used in analog circuitry as an amplifier, by applying a small input signal to the gate and taking a larger output signal from the drain. Finally, it can also be used as a voltage regulator, by modulating the voltage between the source and drain with the application of a gate voltage.

Conclusion

In conclusion, the NTS4173PT1G is a single, N-channel, enhancement-mode, vertical DMOSFET transistor. It finds applications in a variety of technologies, including switching, amplifying, and regulating power. It operates upon the principles of the MOSFET transistor, which relies upon the application of an electric field to create a voltage-controlled current flow between the source and drain. The NTS4173PT1G is an essential component for many electrical systems and is highly reliable when used correctly.

The specific data is subject to PDF, and the above content is for reference

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