Allicdata Part #: | NVB6410ANT4G-ND |
Manufacturer Part#: |
NVB6410ANT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 76A D2PAK |
More Detail: | N-Channel 100V 76A (Tc) 188W (Tc) Surface Mount D2... |
DataSheet: | NVB6410ANT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 76A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 188W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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NVB6410ANT4G is a single P-channel enhancement mode field effect transistor (FET) manufactured by Nexperia. The NVB6410ANT4G is designed to be used as a load switch or in other circuits requiring efficient power control. This powerful field effect transistor can handle up to 20V, up to 1A continuously and up to 6A surge current. It is offered in a small chip size DFN3x3 lead-free package, allowing for tight placements in space-constrained designs.
In order to understand the NVB6410ANT4G and its various applications, we must first understand what a field effect transistor is and how it works. A field effect transistor, or FET, is an electronic device that requires an input signal in order to allow a level of current to flow from one side to the other. FETs are known for their low power consumption and high switching speed. FETs are usually composed of two parts, a source, and a drain. The source is the side where the current enters, and the drain is the side where it exits. In between the source and the drain is a channel made up of a semiconductor material.
The NVB6410ANT4G uses an enhancement mode P-channel layout, meaning that it requires an applied electrical input signal in order to allow current flow from the source to the drain. The NVB6410ANT4G is connected with a gate in order to control the voltage and current. When a positive voltage is applied to the gate, the mosfet is switched on and current is allowed to flow from the source to the drain. When a negative voltage is applied to the gate, the FET is switched off, and no current will flow.
The NVB6410ANT4G is mainly used in mobile and portable devices such as cell phones, laptops, and tablets, as it offers excellent power control and switching capabilities. It is also used in various home appliances and automotive applications, as it can handle high temperature and demanding environments. The NVB6410ANT4G can also be used in LED lighting applications as a switch to control multiple LED strings in one circuit. The use of FETs in LED lighting allows power saving and increases efficiency by switching off strings of LEDs when not needed.
Apart from its wide range of application areas, the NVB6410ANT4G also has many advantages that make it a great choice for many circuit designs. It has a low on-resistance of 8.9mΩ, alongside low input and output capacitance. The NVB6410ANT4G also has a low maximum gate-source threshold voltage, with a maximum on current of 1A and a surge current of 6A.
In conclusion, the NVB6410ANT4G is a powerful field effect transistor designed to provide efficient power control. It is available in a small DFN3x3 lead-free package and has many advantages such as low on-resistance and low input and output capacitance. The NVB6410ANT4G is mainly used in mobile and portable devices, home appliances, and automotive applications, as well as LED lighting applications.
The specific data is subject to PDF, and the above content is for reference
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