NVB6412ANT4G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NVB6412ANT4G is an advanced N-Channel enhancement mode MOSFET suited for a range of different high voltage applications. This FET utilizes the most advanced NVIDIA process technologies to ensure superior switching capability and ultra low gate charge, making it suitable for applications like load switch, DC-DC converter and other high voltage power stage. By harnessing the power of NVIDIA technology this MOSFET achieves high current capability with superior performance, enabling long lifetime and reliability from a single FET.

This MOSFET is composed of a single N-channel insulated gate field effect transistor nominally rated at 40V and 67A since the maximum device power dissipation is 168W. It is offered in a wide variety of different package styles that is specifically designed for high current applications. The wide range of gate packages is directly based on design characteristics making it suitable for harsh high temperature operation. It can also be used in a wide variety of circuit configurations due to its superior transient performance.

The NVB6412ANT4G features a wide range of features and benefits often associated with NVIDIA MOSFETs. Starting with a design optimized to provide superior switching performance the FET has a range of characteristics that are designed to offer maximum flexibility. These include a low on-resistance of only 0.0075 Ohms, a low-capacitance of only 4.5 nF and a low gate charge of 3.3 nC, which are all offered in a tiny 2.5 mOhm package.

The NVB6412ANT4G is also highly regarded for its low-noise performance. This is thanks to its reduced gate resistance and superior temperature stability, which are both excellent for noise sensitive applications like switches for automotive electronics. Additionally, the device is rated to -55°C to +135°C and has an operating time of 2ns, which makes it well suited for operation in tough conditions.

The NVB6412ANT4G has a range of applications due to its versatile design. These include high voltage, high current applications such as DC-DC converters, switching regulators, power supplies, and load switches among others. With its fast switching speeds and low-noise performance, it can be used in a variety of high current, low-noise applications such as audio and video linkages. Additionally, its superior on-resistance and low gate charge makes it well suited for switching operations in a variety of industrial control applications.

The working principle of the NVB6412ANT4G is quite similar to other MOSFETs. MOSFETs are three-terminal devices that are composed of a single N-channel Junction Field Effect Transistor (JFET). This is because the device works based on the principle of metal-oxide-semiconductor (MOS) technology where the gate of the device serves as the input and the source and the drain of the device serves as the outputs. According to this principle, any variation in the input voltage is directly applied to the oxide layer of the MOSFET which in turn creates a change in the output voltage. This is why MOSFETs are considered a current amplifier as they are able to amplify small signals into much larger outputs.

Overall, the NVB6412ANT4G is a high voltage, single N-Channel MOSFET device maximized for low-noise and high-current applications. When paired with NVIDIA\'s advanced process technologies, this device offers a wide range of features, including low-on-resistance, low-capacitance, and low gate charge, which makes it well suited for applications where high current and low-noise are needed. Additionally, the device is well suited for operation in both harsh environments and in a variety of high current, low-noise switching applications.

The specific data is subject to PDF, and the above content is for reference