NVB6413ANT4G

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The NVB6413ANT4G is a single-packaged, single-pole, single-throw, normally-open high-side power MOSFET, designed for use in applications requiring minimum quiescent current and low gate-charge. It is an advanced high-side enhancement mode power MOSFET, combining a low on-state resistance, low gate threshold voltage and variety of protection features.

The device is based on a proprietary advanced trench technology to provide excellent RDS(ON), low gate charge and excellent avalanche characteristics. It is suitable for use in a wide variety of applications, including automotive, consumer, computing and communications systems. It is specifically designed to reduce system power losses, lower EMI and improve system reliability.

The NVB6413ANT4G can be used in a wide range of applications, including power distribution, motor control, battery management and power switching. It is an ideal choice for circuits requiring high current and load current isolation. Its low gate charge and low on-state resistance enable high power density and robust operation even at high frequency.

The NVB6413ANT4G achieves its excellent performance by using advanced trench technology. This technology enables a unique cell design which increases the device’s driving efficiency. The technology also reduces gate capacitance, enabling faster switching and higher efficiency in high frequency applications.

The NVB6413ANT4G also features built-in protection features. It offers the option of a reverse polarity protection to protect against connected circuits in reverse polarity. The device also includes an overcurrent protection, a temperature sensing and derating specification, and a current-limit protection.

The NVB6413ANT4G features an asymmetric protection design, wherein the switching element is protected with the controlled current characteristic of the series MOSFET in the lower voltage range, while in the higher voltage range, the same series MOSFET is protected by the open drain MOSFET. Asymmetric protection helps prevent gate damage and increase reliability in higher power applications. The device also provides under-voltage lockout protection to reduce energy consumption and improve system efficiency.

The NVB6413ANT4G is an ideal choice for a wide range of applications. It can be used in a variety of automotive, consumer and industrial devices to provide reliable power switching with low gate charge and low on-state resistance. Its advanced protection features make it an ideal choice for circuits with high power loads, high frequencies and reverse polarity scenarios.

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