Allicdata Part #: | NVMS4816NR2G-ND |
Manufacturer Part#: |
NVMS4816NR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 9A 8-SOIC |
More Detail: | N-Channel 30V 6.8A (Ta) Surface Mount 8-SOIC |
DataSheet: | NVMS4816NR2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 9A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NVMS4816NR2G is an N-type metal oxide semiconductor field effect transistor (MOSFET) which is a single and enduring device that transmits and amplifies electrical signals in a wide range of applications. It is a high voltage transistor with a continuous drain-source voltage tolerance of up to 48V, making it suitable for most power supplies. The NVMS4816NR2G is used in a variety of industrial, automotive and consumer electronics applications, typically in power supply or motor control, and offers excellent durability and thermal stability.The NVMS4816NR2G offers excellent thermal stability and exhibits excellent frequency response, low on-resistance, high input capacitance, low charge carriers generated and low gate drive requirements. It has a wide drain-source breakdown voltage tolerance, whichfrom -6 mA to 5 A and is capable of blocking reverse bias voltages up to 48V. The device is also capable of fast switching speeds, allowing it to be used in high frequency PWM applications. In addition, it can be used in high power motor control applications, driving a wide variety of inductive and capacitive loads, such as stepper motors, DC fans, pumps, and other components.The working principle of the NVMS4816NR2G is based on that of a field effect transistor. The NVMS4816NR2G operates as a voltage controlled current source, as the channel between the drain and source is controlled by the voltage applied to the gate. The gate voltage controls the size of the channel between the source and drain and the current that passes through it. This allows the device to be switched ON and OFF, by changing the voltage applied to the gate. When the gate voltage is greater than the drain and source combined voltsage, the transistor device is turned ON, which means it has a high input impedance and low output impedance. This allows the current to flow between the drain and source, allowing controlled current flow through the device. When the gate voltage is equal to the drain and source combined voltsage, the transistor device is turn OFF, meaning that the output voltage of the device is equal to the gate voltage. At this point, current is blocked, and the gate-source voltage is zero. When the gate voltage is less than the drain and source combined voltage, the device is Turn OFF and the gate-source voltage is zero. The NVMS4816NR2G is also able to operate in the high frequency range, up to a maximum frequency of 1 MHz. This allows it to be used for applications such as LED drivers and high speed logic drivers, given its ability to switch quickly and accurately. Overall, the NVMS4816NR2G is a popular choice for a variety of industrial, automotive and consumer electronics applications, due to its high voltage, fast switching speeds and durability. Its wide drain-source breakdown voltage tolerance makes it an ideal choice for high power motor control applications, and its frequency response and low gate drive requirements make it suitable for PWM controlled applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
NVMS4816NR2G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 9A 8-SOIC... |
NVMSD6N303R2G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 6A 8SOICN... |
NVMS10P02R2G | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 20V 10A 8SOIC... |
NVMS5P02R2G | ON Semicondu... | 0.29 $ | 2500 | MOSFET P-CH 20V 5.4A 8SOI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...