NVMS4816NR2G Allicdata Electronics
Allicdata Part #:

NVMS4816NR2G-ND

Manufacturer Part#:

NVMS4816NR2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 9A 8-SOIC
More Detail: N-Channel 30V 6.8A (Ta) Surface Mount 8-SOIC
DataSheet: NVMS4816NR2G datasheetNVMS4816NR2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 10 mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The NVMS4816NR2G is an N-type metal oxide semiconductor field effect transistor (MOSFET) which is a single and enduring device that transmits and amplifies electrical signals in a wide range of applications. It is a high voltage transistor with a continuous drain-source voltage tolerance of up to 48V, making it suitable for most power supplies. The NVMS4816NR2G is used in a variety of industrial, automotive and consumer electronics applications, typically in power supply or motor control, and offers excellent durability and thermal stability.The NVMS4816NR2G offers excellent thermal stability and exhibits excellent frequency response, low on-resistance, high input capacitance, low charge carriers generated and low gate drive requirements. It has a wide drain-source breakdown voltage tolerance, whichfrom -6 mA to 5 A and is capable of blocking reverse bias voltages up to 48V. The device is also capable of fast switching speeds, allowing it to be used in high frequency PWM applications. In addition, it can be used in high power motor control applications, driving a wide variety of inductive and capacitive loads, such as stepper motors, DC fans, pumps, and other components.The working principle of the NVMS4816NR2G is based on that of a field effect transistor. The NVMS4816NR2G operates as a voltage controlled current source, as the channel between the drain and source is controlled by the voltage applied to the gate. The gate voltage controls the size of the channel between the source and drain and the current that passes through it. This allows the device to be switched ON and OFF, by changing the voltage applied to the gate. When the gate voltage is greater than the drain and source combined voltsage, the transistor device is turned ON, which means it has a high input impedance and low output impedance. This allows the current to flow between the drain and source, allowing controlled current flow through the device. When the gate voltage is equal to the drain and source combined voltsage, the transistor device is turn OFF, meaning that the output voltage of the device is equal to the gate voltage. At this point, current is blocked, and the gate-source voltage is zero. When the gate voltage is less than the drain and source combined voltage, the device is Turn OFF and the gate-source voltage is zero. The NVMS4816NR2G is also able to operate in the high frequency range, up to a maximum frequency of 1 MHz. This allows it to be used for applications such as LED drivers and high speed logic drivers, given its ability to switch quickly and accurately. Overall, the NVMS4816NR2G is a popular choice for a variety of industrial, automotive and consumer electronics applications, due to its high voltage, fast switching speeds and durability. Its wide drain-source breakdown voltage tolerance makes it an ideal choice for high power motor control applications, and its frequency response and low gate drive requirements make it suitable for PWM controlled applications.

The specific data is subject to PDF, and the above content is for reference

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